Datasheet TPD7107F (Toshiba) - 10
| Hersteller | Toshiba |
| Beschreibung | Intelligent Power Device Silicon Power MOS Integrated Circuit |
| Seiten / Seite | 34 / 10 — TPD7107F. Figure 7.10 Junction Temperature dependency of over current … |
| Dateiformat / Größe | PDF / 1.1 Mb |
| Dokumentensprache | Englisch |
TPD7107F. Figure 7.10 Junction Temperature dependency of over current detection. 7.7. Over temperature protection
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TPD7107F
) V OC2 (V C O VOC4 tection V VOC1 de urrent c VOC3 ver O 25℃ 125℃ Tj(℃)
Figure 7.10 Junction Temperature dependency of over current detection 7.7. Over temperature protection.
The over temperature protection prevents destruction due to the temperature rise of this product and MOSFET, so if junction temperature exceeds Thermal detection temperature, normal off driver operates and turns the external FET off. When junction temperature drops below hysteresis set temperature, this product returns to normal operation. is es VIN yster H TOT TOT - Thys Tj VGATE VDIAG ● VIN: IN pin input voltage ● VGATE: GATE pin output voltage ● VDIAG: DIAG pin output voltage ● TOT: Over heat detection temperature ● Thys: Hysteresis of thermal detection
Figure 7.11 Over temperature protection
© 2020 10 2020-04-09 Toshiba Electronic Devices & Storage Corporation Document Outline 1. Description 2. Uses 3. Features 4. Block Diagram 5. Pin Assignments 6. Pin Description 7. Operational Description 7.1. Protection for reverse connection of power supply 7.2. Active clamp 7.3. Gate drive of Power MOSFET (Off driver) 7.3.1. Normal off, rapid off 7.3.2. Protection for disconnection of GND terminal 7.4. Load current sense at time of Power MOSFET drive 7.5. The abnormalities in power supply voltage (VDD over voltage, VDD under voltage) 7.6. Over current protection 7.7. Over temperature protection. 7.8. Abnormalities in voltage between Drain and source of the external FET (VDS error) 7.9. Load open / VDD short of load line and diagnosis output 7.10. Truth Table 7.11. State Transition Diagram 8. Absolute Maximum Ratings 8.1. Thermal Resistance 9. Operating Ranges 10. Electrical Characteristics 10.1. Electrical characteristics 1 10.2. Electrical characteristics 2 10.3. Current sense amp Electrical Characteristics 11. Test Circuit 11.1. Test circuit 1 High level output voltage (3) 11.2. Test circuit 2 Switching time (Td-ON, Td-OFF, Tr, Tf) 11.3. Test circuit 3 Off impedance at GND open 11.4. Test circuit 4 Input offset voltage 12. Characteristic curves 13. Package Information 13.1. Package Dimensions 13.2. Marking 13.3. Land Pattern Dimensions for Reference only 14. IC Usage Notes 14.1. Notes on Handling of ICs 14.2. Notes on mounting. RESTRICTIONS ON PRODUCT USE
) V OC2 (V C O VOC4 tection V VOC1 de urrent c VOC3 ver O 25℃ 125℃ Tj(℃)
Figure 7.10 Junction Temperature dependency of over current detection 7.7. Over temperature protection.
The over temperature protection prevents destruction due to the temperature rise of this product and MOSFET, so if junction temperature exceeds Thermal detection temperature, normal off driver operates and turns the external FET off. When junction temperature drops below hysteresis set temperature, this product returns to normal operation. is es VIN yster H TOT TOT - Thys Tj VGATE VDIAG ● VIN: IN pin input voltage ● VGATE: GATE pin output voltage ● VDIAG: DIAG pin output voltage ● TOT: Over heat detection temperature ● Thys: Hysteresis of thermal detection
Figure 7.11 Over temperature protection
© 2020 10 2020-04-09 Toshiba Electronic Devices & Storage Corporation Document Outline 1. Description 2. Uses 3. Features 4. Block Diagram 5. Pin Assignments 6. Pin Description 7. Operational Description 7.1. Protection for reverse connection of power supply 7.2. Active clamp 7.3. Gate drive of Power MOSFET (Off driver) 7.3.1. Normal off, rapid off 7.3.2. Protection for disconnection of GND terminal 7.4. Load current sense at time of Power MOSFET drive 7.5. The abnormalities in power supply voltage (VDD over voltage, VDD under voltage) 7.6. Over current protection 7.7. Over temperature protection. 7.8. Abnormalities in voltage between Drain and source of the external FET (VDS error) 7.9. Load open / VDD short of load line and diagnosis output 7.10. Truth Table 7.11. State Transition Diagram 8. Absolute Maximum Ratings 8.1. Thermal Resistance 9. Operating Ranges 10. Electrical Characteristics 10.1. Electrical characteristics 1 10.2. Electrical characteristics 2 10.3. Current sense amp Electrical Characteristics 11. Test Circuit 11.1. Test circuit 1 High level output voltage (3) 11.2. Test circuit 2 Switching time (Td-ON, Td-OFF, Tr, Tf) 11.3. Test circuit 3 Off impedance at GND open 11.4. Test circuit 4 Input offset voltage 12. Characteristic curves 13. Package Information 13.1. Package Dimensions 13.2. Marking 13.3. Land Pattern Dimensions for Reference only 14. IC Usage Notes 14.1. Notes on Handling of ICs 14.2. Notes on mounting. RESTRICTIONS ON PRODUCT USE