Datasheet TPD7106F (Toshiba)
| Hersteller | Toshiba |
| Beschreibung | Intelligent Power Device Silicon Power MOS Integrated Circuit |
| Seiten / Seite | 22 / 1 — TPD7106F. 1. Description. 2. Applications. 3. Features |
| Dateiformat / Größe | PDF / 637 Kb |
| Dokumentensprache | Englisch |
TPD7106F. 1. Description. 2. Applications. 3. Features
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Textversion des Dokuments
TPD7106F
TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit
TPD7106F
1 channel High-Side N channel Power MOSFET Gate Driver
1. Description
TPD7106F is a 1channel high-side N channel power MOSFET gate TPD7106F driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. SSOP16-P-225-0.65B
2. Applications
● Junction Boxes for Automotive. ● Power distribution modules for Automotive. ● Semiconductor relays.
3. Features
● AEC-Q100 qualified. ● Built in the charge pump circuit (Charge pump capacitor is external). ● Output current is -10mA / +400mA, and the drive by parallel use of N channel power MOSFET is possible. ● Built in the protection for reverse connection of power supply. ● Built in the diagnosis output for under voltage of Charge pump circuit. ● SSOP16 package for surface mounting. Note: Due to its MOS structure. This product is sensitive to static electricity. Start of commercial production 2020-03 © 2 019 1 2020-01-16 Toshiba Electronic Devices & Storage Corporation
TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit
TPD7106F
1 channel High-Side N channel Power MOSFET Gate Driver
1. Description
TPD7106F is a 1channel high-side N channel power MOSFET gate TPD7106F driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. SSOP16-P-225-0.65B
2. Applications
● Junction Boxes for Automotive. ● Power distribution modules for Automotive. ● Semiconductor relays.
3. Features
● AEC-Q100 qualified. ● Built in the charge pump circuit (Charge pump capacitor is external). ● Output current is -10mA / +400mA, and the drive by parallel use of N channel power MOSFET is possible. ● Built in the protection for reverse connection of power supply. ● Built in the diagnosis output for under voltage of Charge pump circuit. ● SSOP16 package for surface mounting. Note: Due to its MOS structure. This product is sensitive to static electricity. Start of commercial production 2020-03 © 2 019 1 2020-01-16 Toshiba Electronic Devices & Storage Corporation