Datasheet DN3525 (Microchip) - 2

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DN3525 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings†
Drain-to-Source Voltage... BVDSX Drain-to-Gate Voltage .. BVDGX Gate-to-Source Voltage ... ±20V Operating Ambient Temperature, TA .. –55°C to +150°C Storage Temperature, TS ... –55°C to +150°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS Electrical Specifications:
TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle
Parameter Sym. Min. Typ. Max. Unit Conditions
Drain-to-Source Breakdown BV Voltage DSX 250 — — V VGS = –5V, ID = 100 µA Gate-to-Source Off Voltage VGS(OFF) –1.5 — –3.5 V VDS = 15V, ID = 1 mA Change in VGS(OFF) with ∆V Temperature GS(OFF) — — –4.5 mV/°C VDS = 15V, ID = 1 mA (
Note 1
) Gate Body Leakage Current IGSS — — 100 nA VGS = ±20 V, VDS = 0V V — — 1 µA DS = Maximum rating, V Drain-to-Source Leakage Current I GS = –5V D(OFF) V — — 1 mA DS = 0.8 Maximum rating, VGS = –5V, TA = 125°C (
Note 1
) Saturated Drain-to-Source Current IDSS 300 — — mA VGS = 0V, VDS = 15V Static Drain-to-Source On-State R Resistance DS(ON) — — 6 Ω VGS = 0V, ID = 200 mA Change in RDS(ON) with ∆R Temperature DS(ON) — — 1.1 %/°C VGS = 0V, ID = 200 mA (
Note 1
)
Note 1:
Specification is obtained by characterization and is not 100% tested. DS20005705A-page 2  2018 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSV Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to-Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(OFF) and RDS(ON) with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MIC... Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, Media... ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, ... SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2018, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-3117-6 AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham