Datasheet DN3525 (Microchip) - 5
| Hersteller | Microchip |
| Beschreibung | N-Channel Depletion-Mode Vertical DMOS FET |
| Seiten / Seite | 14 / 5 — DN3525. FIGURE 2-7:. FIGURE 2-10:. FIGURE 2-8:. FIGURE 2-11:. FIGURE … |
| Dateiformat / Größe | PDF / 1.6 Mb |
| Dokumentensprache | Englisch |
DN3525. FIGURE 2-7:. FIGURE 2-10:. FIGURE 2-8:. FIGURE 2-11:. FIGURE 2-9:. FIGURE 2-12:
Modelllinie für dieses Datenblatt
Textversion des Dokuments
DN3525
1.2 25 I = 100A T = 25OC D j V = -5V GS 20 1.1 V = 0V GS 15 1.0 (Ohms) (Normalized) DS(ON) 10 DSV R BV 0.9 5 0.8 0 -50 0 50 100 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T (OC) I (Amperes) j D
FIGURE 2-7:
BVDSV Variation with
FIGURE 2-10:
On-Resistance vs. Drain Temperature. Current. 2000 V and R w/ Temperature V = 10V T = -55OC GS(OFF) DS(ON) DS A 1.3 2.4 1.2 2.2 1600 1.1 2.0 V @ 1mA, 15V T = 25OC GS(OFF) A 1.0 1.8 1200 0.9 1.6 (Normalized) (Normalized) T = 125OC A 0.8 1.4 800 (Milliamperes) I D GS(OFF) DS(ON) V R 0.7 1.2 400 0.6 1.0 R @ 0V, 200mA DS(ON) 0.5 0.8 0 0.4 0.6 -3 -2 -1 0 1 2 -50 -25 0 25 50 75 100 125 150 V (Volts) T (OC) GS j
FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-11:
VGS(OFF) and RDS(ON) with Temperature. 350 3 V = -5V I = 200mA D GS 2 300 1 250 0 200 V = 30V DS olts) -1 (V 150 GS V CISS C (Picofarads) -2 100 -3 COSS 50 -4 CRSS 0 -5 0 10 20 30 40 0 1000 2000 3000 4000 5000 V (Volts) Q (Picocoulombs) DS G
FIGURE 2-9:
Capacitance vs.
FIGURE 2-12:
Gate Drive Dynamic Drain-to-Source Voltage. Characteristics. 2018 Microchip Technology Inc. DS20005705A-page 5 Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSV Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to-Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(OFF) and RDS(ON) with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MIC... Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, Media... ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, ... SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2018, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-3117-6 AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham
1.2 25 I = 100A T = 25OC D j V = -5V GS 20 1.1 V = 0V GS 15 1.0 (Ohms) (Normalized) DS(ON) 10 DSV R BV 0.9 5 0.8 0 -50 0 50 100 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T (OC) I (Amperes) j D
FIGURE 2-7:
BVDSV Variation with
FIGURE 2-10:
On-Resistance vs. Drain Temperature. Current. 2000 V and R w/ Temperature V = 10V T = -55OC GS(OFF) DS(ON) DS A 1.3 2.4 1.2 2.2 1600 1.1 2.0 V @ 1mA, 15V T = 25OC GS(OFF) A 1.0 1.8 1200 0.9 1.6 (Normalized) (Normalized) T = 125OC A 0.8 1.4 800 (Milliamperes) I D GS(OFF) DS(ON) V R 0.7 1.2 400 0.6 1.0 R @ 0V, 200mA DS(ON) 0.5 0.8 0 0.4 0.6 -3 -2 -1 0 1 2 -50 -25 0 25 50 75 100 125 150 V (Volts) T (OC) GS j
FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-11:
VGS(OFF) and RDS(ON) with Temperature. 350 3 V = -5V I = 200mA D GS 2 300 1 250 0 200 V = 30V DS olts) -1 (V 150 GS V CISS C (Picofarads) -2 100 -3 COSS 50 -4 CRSS 0 -5 0 10 20 30 40 0 1000 2000 3000 4000 5000 V (Volts) Q (Picocoulombs) DS G
FIGURE 2-9:
Capacitance vs.
FIGURE 2-12:
Gate Drive Dynamic Drain-to-Source Voltage. Characteristics. 2018 Microchip Technology Inc. DS20005705A-page 5 Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSV Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to-Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(OFF) and RDS(ON) with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MIC... Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, Media... ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, ... SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2018, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-3117-6 AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham