Datasheet NTZD3155C (ON Semiconductor) - 5
| Hersteller | ON Semiconductor |
| Beschreibung | MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 |
| Seiten / Seite | 8 / 5 — NTZD3155C. N−CHANNEL TYPICAL PERFORMANCE CURVES. Figure 8. Gate−to−Source … |
| Revision | 4 |
| Dateiformat / Größe | PDF / 144 Kb |
| Dokumentensprache | Englisch |
NTZD3155C. N−CHANNEL TYPICAL PERFORMANCE CURVES. Figure 8. Gate−to−Source and. Figure 7. Capacitance Variation
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NTZD3155C N−CHANNEL TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted) 200 5 20 TJ = 25°C QT V 4 DS 16 150 TAGE (V) TAGE (V) VGS 3 12 ANCE (pF) 100 VGS = 0 V ACIT CISS 2 8 −SOURCE VOL −SOURCE VOL QGS QGD 50 −TO −TO C, CAP VDS = 0 V TE 1 I 4 D = 0.54 A COSS , GA TJ = 25°C , DRAIN 0 V GS 0 0 V DS 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VDS Qg, TOTAL GATE CHARGE (nC) DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source and Figure 7. Capacitance Variation Drain−to−Source Voltage versus Total Charge
100 0.6 V V DS = 10 V GS = 0 V I T D = 0.2 A 0.5 J = 25°C VGS = 4.5 V 0.4 td(OFF) 10 t 0.3 f t, TIME (ns) td(ON) tr 0.2 , SOURCE CURRENT (A) I S 0.1 1 0 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus versus Gate Resistance Current www.onsemi.com 5
(TJ = 25°C unless otherwise noted) 200 5 20 TJ = 25°C QT V 4 DS 16 150 TAGE (V) TAGE (V) VGS 3 12 ANCE (pF) 100 VGS = 0 V ACIT CISS 2 8 −SOURCE VOL −SOURCE VOL QGS QGD 50 −TO −TO C, CAP VDS = 0 V TE 1 I 4 D = 0.54 A COSS , GA TJ = 25°C , DRAIN 0 V GS 0 0 V DS 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VDS Qg, TOTAL GATE CHARGE (nC) DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source and Figure 7. Capacitance Variation Drain−to−Source Voltage versus Total Charge
100 0.6 V V DS = 10 V GS = 0 V I T D = 0.2 A 0.5 J = 25°C VGS = 4.5 V 0.4 td(OFF) 10 t 0.3 f t, TIME (ns) td(ON) tr 0.2 , SOURCE CURRENT (A) I S 0.1 1 0 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus versus Gate Resistance Current www.onsemi.com 5