Datasheet NTZD3155C (ON Semiconductor) - 7
| Hersteller | ON Semiconductor |
| Beschreibung | MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 |
| Seiten / Seite | 8 / 7 — NTZD3155C. P−CHANNEL TYPICAL PERFORMANCE CURVES. Figure 7. Capacitance … |
| Revision | 4 |
| Dateiformat / Größe | PDF / 144 Kb |
| Dokumentensprache | Englisch |
NTZD3155C. P−CHANNEL TYPICAL PERFORMANCE CURVES. Figure 7. Capacitance Variation. Figure 8. Gate−to−Source and
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NTZD3155C P−CHANNEL TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted) 250 TS) 5 10 VGS = 0 V T Q J = 25°C T 9 200 TAGE (V) 4 8 −V −V DS GS TAGE (VOL 7 150 CISS 3 6 ANCE (pF) 5 ACIT 100 −SOURCE VOL 2 4 −SOURCE VOL C QGS Q OSS −TO GD 3 C, CAP 50 TE 1 −TO C 2 RSS GA I , D = −0.215 A T 1 J = 25°C 0 0 DRAIN −V GS 0 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 −V DS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge
100 0.6 VGS = 0 V TJ = 25°C td(OFF) t 0.4 f 10 tr td(ON) t, TIME (ns) 0.2 VDD = −10 V I , SOURCE CURRENT (AMPS) D = −0.215 A V −I S GS = −4.5 V 1 0 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current vs. Gate Resistance www.onsemi.com 7
(TJ = 25°C unless otherwise noted) 250 TS) 5 10 VGS = 0 V T Q J = 25°C T 9 200 TAGE (V) 4 8 −V −V DS GS TAGE (VOL 7 150 CISS 3 6 ANCE (pF) 5 ACIT 100 −SOURCE VOL 2 4 −SOURCE VOL C QGS Q OSS −TO GD 3 C, CAP 50 TE 1 −TO C 2 RSS GA I , D = −0.215 A T 1 J = 25°C 0 0 DRAIN −V GS 0 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 −V DS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge
100 0.6 VGS = 0 V TJ = 25°C td(OFF) t 0.4 f 10 tr td(ON) t, TIME (ns) 0.2 VDD = −10 V I , SOURCE CURRENT (AMPS) D = −0.215 A V −I S GS = −4.5 V 1 0 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current vs. Gate Resistance www.onsemi.com 7