Datasheet MTD1N60E (Motorola) - 6
| Hersteller | Motorola |
| Beschreibung | TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount. N−Channel Enhancement−Mode Silicon Gate |
| Seiten / Seite | 10 / 6 — SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. Figure 12. … |
| Revision | XXX |
| Dateiformat / Größe | PDF / 239 Kb |
| Dokumentensprache | Englisch |
SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. Figure 12. Maximum Avalanche Energy versus. Safe Operating Area
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MTD1N60E
SAFE OPERATING AREA
10 50 VGS = 20 V I SINGLE PULSE D = 1 A 10 µs TC = 25°C 40 1 O−SOURCE (mJ) (AMPS) 30 100 µs 0.1 1 ms dc 20 10 ms , DRAIN CURRENT 0.01 AVALANCHE ENERGY I D RDS(on) LIMIT 10 THERMAL LIMIT , SINGLE PULSE DRAINN−T PACKAGE LIMIT E AS 0.001 0 0.1 1 10 100 1000 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC THERMAL D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN 0.01 , NORMALIZED EFFECTIVE t1 READ TIME AT t1 r(t) SINGLE PULSE t2 TJ(pk) − TC = P(pk) RθJC(t) TRANSIENT DUTY CYCLE, D = t1/t2 0.011.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t,TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform
6 Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
10 50 VGS = 20 V I SINGLE PULSE D = 1 A 10 µs TC = 25°C 40 1 O−SOURCE (mJ) (AMPS) 30 100 µs 0.1 1 ms dc 20 10 ms , DRAIN CURRENT 0.01 AVALANCHE ENERGY I D RDS(on) LIMIT 10 THERMAL LIMIT , SINGLE PULSE DRAINN−T PACKAGE LIMIT E AS 0.001 0 0.1 1 10 100 1000 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC THERMAL D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN 0.01 , NORMALIZED EFFECTIVE t1 READ TIME AT t1 r(t) SINGLE PULSE t2 TJ(pk) − TC = P(pk) RθJC(t) TRANSIENT DUTY CYCLE, D = t1/t2 0.011.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t,TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform
6 Motorola TMOS Power MOSFET Transistor Device Data