Datasheet MTD1N60E (Motorola) - 3
| Hersteller | Motorola |
| Beschreibung | TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount. N−Channel Enhancement−Mode Silicon Gate |
| Seiten / Seite | 10 / 3 — TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. … |
| Revision | XXX |
| Dateiformat / Größe | PDF / 239 Kb |
| Dokumentensprache | Englisch |
TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
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MTD1N60E
TYPICAL ELECTRICAL CHARACTERISTICS
2 2 TJ = 25°C V V GS = 10 V DS ≥ 10 V 1.8 7 V 6 V 1.6 1.6 (AMPS) 1.4 (AMPS) 1.2 1.2 1 0.8 0.8 , DRAIN CURRENT 0.6 5 V , DRAIN CURRENT I D I D 100°C 0.4 0.4 25°C 0.2 TJ = − 55°C 0 0 0 2 4 6 8 10 12 14 16 18 20 2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6 6.4 6.8 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
16 9 VGS = 10 V TJ = 25°C 14 8.5 ANCE (OHMS) ANCE (OHMS) 12 TJ = 100°C 8 10 7.5 8 7 25°C VGS = 10 V O−SOURCE RESIST 6 O−SOURCE RESIST 6.5 15 V 4 − 55°C 6 , DRAIN−T , DRAIN−T 2 5.5 DS(on) 0 DS(on) R R 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2.4 1000 VGS = 0 V VGS = 10 V ANCE 2 ID = 0.5 A TJ = 125°C 1.6 100 100°C 1.2 O−SOURCE RESIST , LEAKAGE (nA) (NORMALIZED) 0.8 10 I DSS 25°C , DRAIN−T 0.4 DS(on)R 0 1 − 50 − 25 0 25 50 75 100 125 150 0 100 200 300 400 500 600 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data 3
TYPICAL ELECTRICAL CHARACTERISTICS
2 2 TJ = 25°C V V GS = 10 V DS ≥ 10 V 1.8 7 V 6 V 1.6 1.6 (AMPS) 1.4 (AMPS) 1.2 1.2 1 0.8 0.8 , DRAIN CURRENT 0.6 5 V , DRAIN CURRENT I D I D 100°C 0.4 0.4 25°C 0.2 TJ = − 55°C 0 0 0 2 4 6 8 10 12 14 16 18 20 2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6 6.4 6.8 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
16 9 VGS = 10 V TJ = 25°C 14 8.5 ANCE (OHMS) ANCE (OHMS) 12 TJ = 100°C 8 10 7.5 8 7 25°C VGS = 10 V O−SOURCE RESIST 6 O−SOURCE RESIST 6.5 15 V 4 − 55°C 6 , DRAIN−T , DRAIN−T 2 5.5 DS(on) 0 DS(on) R R 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2.4 1000 VGS = 0 V VGS = 10 V ANCE 2 ID = 0.5 A TJ = 125°C 1.6 100 100°C 1.2 O−SOURCE RESIST , LEAKAGE (nA) (NORMALIZED) 0.8 10 I DSS 25°C , DRAIN−T 0.4 DS(on)R 0 1 − 50 − 25 0 25 50 75 100 125 150 0 100 200 300 400 500 600 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data 3