Datasheet SID1181KQ SCALE-iDriver (Power Integrations) - 10

HerstellerPower Integrations
BeschreibungUp to 8 A Single Channel 600 V / 650 V / 750 V IGBT/MOSFET Gate Drivers for Automotive Applications Providing Reinforced Galvanic Isolation
Seiten / Seite22 / 10 — SID1181KQ. VCE Diode Chain. Pin. Return Pin. Recommended. Value. Symbol. …
Dateiformat / GrößePDF / 1.5 Mb
DokumentenspracheEnglisch

SID1181KQ. VCE Diode Chain. Pin. Return Pin. Recommended. Value. Symbol. Remark

SID1181KQ VCE Diode Chain Pin Return Pin Recommended Value Symbol Remark

Modelllinie für dieses Datenblatt

Textversion des Dokuments

SID1181KQ VCE Diode Chain Pin Return Pin Recommended Value Symbol Remark
Needed if command signals >5 V are used. For 15 V Command Signal IC Application specific R input logic a value of 3.3 kW is recommended. The use 1 1 of 1% / 0.1 W / 50 V in 0603 package is recommended. Needed if command signals >5 V are used. For 15 V R GND Application specific R input logic a value of 1.2 kW is recommended. The use 1 2 of 1% / 0.1 W / 50 V in 0603 package is recommended. Pull up resistor, the use of 1% / 0.1 W / 50 V in 0603 SO VCC 4.7 kW RSO package is recommended. VCC blocking capacitors C must be placed close to the 1 VCC GND 4.7 IC. Enlarged loop could result in inadequate VCC supply µF C1 voltage during operation. For C X7R / 25 V / 10% in a 1 1206 package is recommended. VCC blocking capacitors C must be placed close to the 2 VCC GND 470 nF C IC. Enlarged loop could result in inadequate VCC supply 2 voltage during operation. For C X7R / 25 V / 10% in a 2 0608 package is recommended. If used, the tau determines to τ = ( R × R × C ) / 1 2 F R GND Application specific C (R + R ) The use of NP0, C0G / 50 V / 5% in 0603 1 F 1 2 package is recommended. In case bad signal quality at the command signal input is expected, a schmitt trigger could be used to improve the R IN Application specific IC 1 1 signal quality at the IN pin. As a reference Nexperia 74LVC1G17-Q100 could be used. C should be at least 3 μF multiplied by the total gate S1x charge of the power semiconductor switch (Q ) divided GATE VEE COM Application specific C by 1 µC. The use of X7R / 25 V / 10% in 1206 package S1x is recommended. This capacitor needs to be placed close to the IC pins. C should be at least 3 μF multiplied by the total gate S2x charge of the power semiconductor switch (Q ) divided GATE VISO VEE Application specific C by 1 µC. The use of X7R / 25 V / 10% in 1206 package S2x is recommended. This capacitor needs to be placed close to the IC pins. Short-circuit response time capacitor. 33 pF is a typical application value, higher values will increase the response time while smaller values will decrease it. It can be adjusted in the range 33 pF to 330 pF. To VCE COM Application specific C determine the correct value short-circuit testing in double RES pulse configuration is recommended. Furthermore the use of NP0, C0G / 50 V / 5% in 0603 package is recommended. Any net and any other layer should provide sufficient distance to in order to C avoid RES parasitic effects. To avoid misoperation, this pin should not be connected to anything else. This capacitor needs to be as close to VGXX GH 10 nF CGXX IC pins as possible. The use of X7R / 25 V / 10% in 0603 package is recommended. The use of 1% / 0.1 W / 50 V in 0603 package is D VCE 330 recommended. Any net and any other layer should W R VCE2 VCE provide sufficient distance to R in order to avoid VCE parasitic effects.
10
Rev. B 09/19 www.power.com Document Outline Product Highlights Description Product Portfolio Pin Functional Description SCALE-iDriver Functional Description Application Examples and Components Selection Power Dissipation and IC Junction Temperature Estimation Absolute Maximum Ratings Thermal Resistance Key Electrical Characteristics Typical Performance Characteristics eSOP-R16B Package Drawing MSL Table ESD and Latch-Up Table IEC 60664-1 Rating Table Electrical Characteristics (EMI) Table Regulatory Information Table Part Ordering Information