Datasheet SID1181KQ SCALE-iDriver (Power Integrations) - 9
| Hersteller | Power Integrations |
| Beschreibung | Up to 8 A Single Channel 600 V / 650 V / 750 V IGBT/MOSFET Gate Drivers for Automotive Applications Providing Reinforced Galvanic Isolation |
| Seiten / Seite | 22 / 9 — SID1181KQ |
| Dateiformat / Größe | PDF / 1.5 Mb |
| Dokumentensprache | Englisch |
SID1181KQ
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SID1181KQ
For a DC-link voltage of 550 V, the short-circuit resistor chain have a overall value of 1.2 MW giving a current of Power 0.67 mA. Other values are also possible but it has to be Semiconductor R 10 x 120 k considered that the current through the chain shall be W R − R VCE1 VCE2 VCE10 Collector 0.6 to 0.8 mA. The use of 1% / 0.25 W / 200 V in 1206 package is recommended. Any net and any other layer should provide sufficient distance to R − R in VCE2 VCE10 order to avoid parasitic effects. "To avoid parasitic power-switch-conduction during Power system power-on, the gate is connected to COM Semiconductor COM 22 kW RDIS through 22 k Gate W. The use of 1% / 0.1 W / 50 V in 0603 package is recommended." "To ensure gate voltage stabilization and collector current limitation during a short-circuit, the gate is Power connected to the VISO pin through the Schottky diode VISO Semiconductor Schottky Diode D D . D should be connected close to capacitor C as STO STO STO S1 Gate well as the power semiconductor gate. Enlarged loop could result in increased short-circuit current. The use of Nexperia PMEG4010CEJ is recommended." Clamping diode to the secondary-side power supply voltage. The use of Nexperia BAS416 is recommended. R VISO Diode D VCE1 CL Any net and any other layer should provide sufficient distance to D in order to avoid parasitic effects. CL Power Semiconductor GH Application specific R As the turn-on gate resistor can get hot, the component GON Gate shall be placed away from the gate driver IC. Power Semiconductor GL Application specific R As the turn-off gate resistor can get hot, the component GOFF Gate shall be placed away from the gate driver IC. Table 2. PCB Layout and Component Guidelines Referring to Figure 12.
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Rev. B 09/19 www.power.com Document Outline Product Highlights Description Product Portfolio Pin Functional Description SCALE-iDriver Functional Description Application Examples and Components Selection Power Dissipation and IC Junction Temperature Estimation Absolute Maximum Ratings Thermal Resistance Key Electrical Characteristics Typical Performance Characteristics eSOP-R16B Package Drawing MSL Table ESD and Latch-Up Table IEC 60664-1 Rating Table Electrical Characteristics (EMI) Table Regulatory Information Table Part Ordering Information
For a DC-link voltage of 550 V, the short-circuit resistor chain have a overall value of 1.2 MW giving a current of Power 0.67 mA. Other values are also possible but it has to be Semiconductor R 10 x 120 k considered that the current through the chain shall be W R − R VCE1 VCE2 VCE10 Collector 0.6 to 0.8 mA. The use of 1% / 0.25 W / 200 V in 1206 package is recommended. Any net and any other layer should provide sufficient distance to R − R in VCE2 VCE10 order to avoid parasitic effects. "To avoid parasitic power-switch-conduction during Power system power-on, the gate is connected to COM Semiconductor COM 22 kW RDIS through 22 k Gate W. The use of 1% / 0.1 W / 50 V in 0603 package is recommended." "To ensure gate voltage stabilization and collector current limitation during a short-circuit, the gate is Power connected to the VISO pin through the Schottky diode VISO Semiconductor Schottky Diode D D . D should be connected close to capacitor C as STO STO STO S1 Gate well as the power semiconductor gate. Enlarged loop could result in increased short-circuit current. The use of Nexperia PMEG4010CEJ is recommended." Clamping diode to the secondary-side power supply voltage. The use of Nexperia BAS416 is recommended. R VISO Diode D VCE1 CL Any net and any other layer should provide sufficient distance to D in order to avoid parasitic effects. CL Power Semiconductor GH Application specific R As the turn-on gate resistor can get hot, the component GON Gate shall be placed away from the gate driver IC. Power Semiconductor GL Application specific R As the turn-off gate resistor can get hot, the component GOFF Gate shall be placed away from the gate driver IC. Table 2. PCB Layout and Component Guidelines Referring to Figure 12.
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Rev. B 09/19 www.power.com Document Outline Product Highlights Description Product Portfolio Pin Functional Description SCALE-iDriver Functional Description Application Examples and Components Selection Power Dissipation and IC Junction Temperature Estimation Absolute Maximum Ratings Thermal Resistance Key Electrical Characteristics Typical Performance Characteristics eSOP-R16B Package Drawing MSL Table ESD and Latch-Up Table IEC 60664-1 Rating Table Electrical Characteristics (EMI) Table Regulatory Information Table Part Ordering Information