2ED21091S06F 650 V half bridge gate driver with integrated bootstrap diode 3 Pin configuration and functionality 3.1 Pin configuration 1 VCCVB 8 2 INHO 7 3 DT/SDVS 6 4 COMLO 5 8 - Lead DSO - 8 (150 mil) 2ED21091S06F Figure 3 2ED2109S06F pin assignments (top view) 3.2 Pin functionality Table 2 Symbol Description VCC Low-side and logic supply voltage Logic input for high-side and low-side gate driver output (HO and LO), in phase IN with HO. Schmitt trigger input with hysteresis and pul down DT/SD Logic input for shut down (out of phase) and programmable dead time pin COM Low-side gate drive return LO Low-side driver output VS High voltage floating supply return HO High-side driver output VB High-side gate drive floating supply Datasheet 5 of 25 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Potential applications Product validation Ordering information Description 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Deadtime 5.4 Matched propagation delays 5.5 Shutdown input 5.6 Input logic compatibility 5.7 Undervoltage lockout 5.8 Bootstrap diode 5.9 Calculating the bootstrap capacitance CBS 5.10 Tolerant to negative tranisents on input pins 5.11 Negative voltage transient tolerance of VS pin 5.12 NTSOA – Negative Transient Safe Operating Area 5.13 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.14 Maximum switching frequency 5.15 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history