Preliminary Datasheet GPI8HINOIC (GaNPower International) - 2

GaNPower International Inc. WWW. IGANPOWER.COM 230 -3410 LOUGHEED HWY VANCOUVER, BC, V5M 2A4 CANADA
Basic Parameters Test data Parameters Conditions Min Typical Max Unit
V 1 BV gs=0V dss Drain-Source breakdown voltage 650 V Id=10uA Static drain-source on resistance, V 2 R gs=6V dson 165 175 220 mΩ TC = 25℃ Id=1.8A 3 Vdd Drive supply voltage 5 6.5 8 V Turn-off narrow pulse triggering Pulse width 4 Vin1 3 5 8 V pulse 100ns-300ns Turn-on narrow pulse triggering Pulse width 5 Vin2 3 5 8 V pulse 100ns-300ns
Switching Performance Test data Parameters Conditions Min Typical Max Unit
1 td(on) Turn-on delay time V 15 ns ds=385V 2 tr Rise time Id=1.6A 10 ns 3 td(off) Turn-off delay time Vin1/2=5V 10 ns Vdd=6.5V 4 tf Fall time 8 ns Device Characteristics For more information, visit us at: www.iganpower.com, or contact us at sales@iganpower.com