Preliminary Datasheet GPI8HINOIC (GaNPower International)

GaNPower International Inc. WWW. IGANPOWER.COM 230 -3410 LOUGHEED HWY VANCOUVER, BC, V5M 2A4 CANADA GPI8HINOIC GaN Power IC in DFN5x6 Package
Preliminary Datasheet version: 1.0
Features BVdss Rdson Ids 650V 170 mΩ 7.5 A  Edge-triggered high-side power IC  Small transformer isolation  Low Rds and high dv/dt capability  Extremely low input capacitance  Fast switching  Low Profile Applications  High-side switch in switching power applications  Power adapters and power delivery chargers Description These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN on silicon technology. The gate driver is integrated with the main power transistor resulting in fast switching, high system power density and low cost. Edge triggering narrow pulse is used to control device turn-on/off. This results in high noise immunity and small and inexpensive transformer for isolation and level shifting for the high-side switch in a half bridge application. For more information, visit us at: www.iganpower.com, or contact us at sales@iganpower.com