Datasheet STW88N65M5, STWA88N65M5 (STMicroelectronics) - 5

HerstellerSTMicroelectronics
BeschreibungN-channel 650 V, 0.024 Ω typ., 84 A, MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages
Seiten / Seite16 / 5 — STW88N65M5, STWA88N65M5. Electrical characteristics. Table 6. Switching …
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STW88N65M5, STWA88N65M5. Electrical characteristics. Table 6. Switching times. Symbol. Parameter. Test conditions. Min. Typ. Max. Unit

STW88N65M5, STWA88N65M5 Electrical characteristics Table 6 Switching times Symbol Parameter Test conditions Min Typ Max Unit

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STW88N65M5, STWA88N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit
td(V) Voltage delay time - 141 - ns VDD = 400 V, ID = 56 A, tr(V) Voltage rise time R - 16 - ns G = 4.7 Ω, VGS = 10 V (see Figure 17) tf(i) Current fall time - 29 - ns (see Figure 20) tc(off) Crossing time - 56 - ns
Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 84 A ISDM (1) Source-drain current (pulsed) - 336 A VSD (2) Forward on voltage ISD = 84 A, VGS = 0 - 1.5 V trr Reverse recovery time - 544 ns ISD = 84 A, Q di/dt = 100 A/µs rr Reverse recovery charge - 14 µC VDD = 100 V (see Figure 17) IRRM Reverse recovery current - 50 A trr Reverse recovery time ISD = 84 A, - 660 ns di/dt = 100 A/µs Qrr Reverse recovery charge - 20 µC VDD = 100 V, Tj = 150 °C IRRM Reverse recovery current (see Figure 17) - 60 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID022522 Rev 5 5/16 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On /off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package mechanical data Figure 21. TO-247 drawing Table 8. TO-247 mechanical data Figure 22. TO-247 long leads drawing Table 9. TO-247 long leads mechanical data 5 Revision history Table 10. Document revision history