Datasheet STW88N65M5, STWA88N65M5 (STMicroelectronics)

STW88N65M5 STWA88N65M5
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages
Datasheet
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production data Features V Order codes DSS R @T DS(on) max. ID jmax.
STW88N65M5 710 V 0.029 Ω 84 A STWA88N65M5 3 2 1 • Worldwide best RDS(on) in TO-247
TO-247
• Higher VDSS rating
TO-247 long leads
• Higher dv/dt capability • Excellent switching performance • Easy to drive
Figure 1. Internal schematic diagram
• 100% avalanche tested
Applications
' • High efficiency switching applications: – Servers – PV inverters – Telecom infrastructure * – Multi kW battery chargers
Description
6 These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative $0Y proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Table 1. Device summary Order codes Marking Packages Packaging
STW88N65M5 TO-247 88N65M5 Tube STWA88N65M5 TO-247 long leads July 2014 DocID022522 Rev 5 1/16 This is information on a product in full production. www.st.com 16 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On /off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package mechanical data Figure 21. TO-247 drawing Table 8. TO-247 mechanical data Figure 22. TO-247 long leads drawing Table 9. TO-247 long leads mechanical data 5 Revision history Table 10. Document revision history