Datasheet IGT40R070D1 E8220 (Infineon) - 9
| Hersteller | Infineon |
| Beschreibung | CoolGaN™ 400V enhancement-mode power transistor |
| Seiten / Seite | 16 / 9 — Figure 9. Figure 10. (V). 500. -25. -20. -15. -10. 450. 400. -50. 350. … |
| Revision | 02_00 |
| Dateiformat / Größe | PDF / 525 Kb |
| Dokumentensprache | Englisch |
Figure 9. Figure 10. (V). 500. -25. -20. -15. -10. 450. 400. -50. 350. -100. 300. 250. -150. I G. 200. -200. 150. -250. 100. -300. 0.5. 1.5. 2.5. 3.5. 4.5. -350. Figure 11
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IGT40R070D1 E8220 400V CoolGaN™ enhancement-mode Power Transistor
Figure 9
Typ. gate characteristics forward
Figure 10
Typ. gate characteristics reverse
V (V) 500 GS -25 -20 -15 -10 -5 0 0 450 400 -50 350 -100 300
125°C
)
25°C
A ) 250 (m -150 A S (m I G S 200 I G -200 150 -250 100 50
-55°C
-300 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -350 V (V) GS
IGS=f(VGS,Tj); open drain IGS=f(VGS); Tj= 25 °C
Figure 11
Typ. transfer characteristics
Figure 12
Typ. transfer characteristics 80 35 80 35 70 70 30 30 60 60 25 25 50 50 20
) ) )
20
A ) A (A
40
(A (m
40
(m I D I D
15
I G
15
I G
30 30 10 10 20 20 5 5 10 10 0 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5
V (V) V (V) GS GS
ID, IG =f(VGS); VDS = 8 V; Tj= 25 °C ID, IG =f(VGS); VDS = 8 V ; Tj= 125 °C Final Data Sheet 9 Rev. 2.0 2018-04-25
Figure 9
Typ. gate characteristics forward
Figure 10
Typ. gate characteristics reverse
V (V) 500 GS -25 -20 -15 -10 -5 0 0 450 400 -50 350 -100 300
125°C
)
25°C
A ) 250 (m -150 A S (m I G S 200 I G -200 150 -250 100 50
-55°C
-300 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -350 V (V) GS
IGS=f(VGS,Tj); open drain IGS=f(VGS); Tj= 25 °C
Figure 11
Typ. transfer characteristics
Figure 12
Typ. transfer characteristics 80 35 80 35 70 70 30 30 60 60 25 25 50 50 20
) ) )
20
A ) A (A
40
(A (m
40
(m I D I D
15
I G
15
I G
30 30 10 10 20 20 5 5 10 10 0 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5
V (V) V (V) GS GS
ID, IG =f(VGS); VDS = 8 V; Tj= 25 °C ID, IG =f(VGS); VDS = 8 V ; Tj= 125 °C Final Data Sheet 9 Rev. 2.0 2018-04-25