IGT40R070D1 E8220 400V CoolGaN™ enhancement-mode Power Transistor Figure 5 Typ. output characteristics Figure 6 Typ. output characteristics 9090 I = 26.1 mA G 808070 I = 10 mA 70 G I = 1 mA 60 G 60 I = 26.1 mA G 50) 50 I = 10 mA ) G (A(A I = 0.1mA I D G I D 4040 I = 1 mA G 30302020 I = 0.1mA G 10100002468100246810V(V)V(V)DSDS ID=f(VDS,IG); Tj= 25 °C ID=f(VDS,IG); Tj= 125 °C Figure 7 Typ. Drain-source on-state resistance Figure 8 Drain-source on-state resistance 200120110 I = 0.1 mA I = 1 mA G G I = 10 mA I = 26.1 mA I = 8A, V = 3.5V, G G D GS 1001809080))160ΩΩ 70 I = 8A, I = 26.1mA, D G (m(m))nn 60(o(oSSDDR 14050R4030120201010000102030405060-50-250255075100125150I (A)T (°C)DJ Rdson=f(ID,IGS); Tj= 125 °C Rdson=f(Tj); ID = 8 A Final Data Sheet 8 Rev. 2.0 2018-04-25