Datasheet BSC034N06NS (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | OptiMOS Power-Transistor |
| Seiten / Seite | 10 / 4 — BSC034N06NS. 1 Power dissipation. 2 Drain current. 120. 100. otP. 125. … |
| Revision | 02_00 |
| Dateiformat / Größe | PDF / 501 Kb |
| Dokumentensprache | Englisch |
BSC034N06NS. 1 Power dissipation. 2 Drain current. 120. 100. otP. 125. 150. 175. [°C]. 3 Safe operating area
Modelllinie für dieses Datenblatt
Textversion des Dokuments
BSC034N06NS 1 Power dissipation 2 Drain current
P ≥10 V tot=f(T C) I D=f(T C); V GS
80 120 100 60 80 ] ] [W 40 t [A 60 otP I D 40 20 20 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 101
limited by on-state resistance 1 µs 10 µs
102 100
0.5 100 µs 0.2
]
0.1
] [A 101
0.05 1 ms
[K/W 10-1 I D C
10 ms
J
0.02
htZ
DC 0.01 single pulse
100 10-1 10-3 10-1 100 101 102 10-6 10-5 10-3 10-2 10-1 100 V [V] t [s] DS p
Rev.2.0 page 4 2013-10-17
P ≥10 V tot=f(T C) I D=f(T C); V GS
80 120 100 60 80 ] ] [W 40 t [A 60 otP I D 40 20 20 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 101
limited by on-state resistance 1 µs 10 µs
102 100
0.5 100 µs 0.2
]
0.1
] [A 101
0.05 1 ms
[K/W 10-1 I D C
10 ms
J
0.02
htZ
DC 0.01 single pulse
100 10-1 10-3 10-1 100 101 102 10-6 10-5 10-3 10-2 10-1 100 V [V] t [s] DS p
Rev.2.0 page 4 2013-10-17