Datasheet BSC034N06NS (Infineon) - 3

BSC034N06NS Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics
Input capacitance C iss - 2400 3000 pF V Output capacitance C GS=0 V, V DS=30 V, oss - 560 700 f =1 MHz Reverse transfer capacitance Crss - 27 54 Turn-on delay time t d(on) - 9 - ns Rise time t V DD=30 V, V GS=10 V, r - 5 - I D=50 A, Turn-off delay time t d(off) - 19 - R G,ext,ext=1.6 W Fall time t f - 5 - Gate Charge Characteristics5) Gate to source charge Q gs - 11 - nC Gate charge at threshold Q g(th) - 6.7 - Gate to drain charge Q gd - 6.5 9.2 V DD=30 V, I D=50 A, V Switching charge Q GS=0 to 10 V sw - 11 - Gate charge total Q g - 33 41 Gate plateau voltage V plateau - 4.7 - V V DS=0.1 V, Gate charge total, sync. FET Q g(sync) - 29 - nC V GS=0 to 10 V Output charge Q oss V DD=30 V, V GS=0 V - 37 -
Reverse Diode
Diode continuous forward current I S - - 67 A T C=25 °C Diode pulse current I S,pulse - - 400 V GS=0 V, I F=50 A, Diode forward voltage V SD - 0.9 1.2 V T j=25 °C Reverse recovery time t rr - 49 78 ns V R=30 V, I F=50 A, di Reverse recovery charge Q F/dt =100 A/µs rr - 65 - nC 5) See figure 16 for gate charge parameter definition Rev.2.0 page 3 2013-10-17