Datasheet MMBTA56, PZTA56 (ON Semiconductor) - 5
| Hersteller | ON Semiconductor |
| Beschreibung | PNP General Purpose Amplifier |
| Seiten / Seite | 9 / 5 |
| Revision | A |
| Dateiformat / Größe | PDF / 405 Kb |
| Dokumentensprache | Englisch |
Modelllinie für dieses Datenblatt
Textversion des Dokuments
f T -GAIN BANDWIDTH PRODUCT (MHz) V CE -COLLECTOR-EMITTER VOLTAGE (V) 10 350 VCE = 5V 300 T A = 25°C 8 250 6 200 IC = 1 mA 100 mA 10 mA 150 4 100 2 0
3000 5000 10000 20000 30000 50000 50
0
1 10 100 IC -COLLECTOR CURRENT (mA) I B -BASE CURRENT (uA) Figure 10. Gain Bandwidth Product
vs. Collector Current Figure 9. Collector Saturation Region P D -POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5
SOT-23 0.25 0 0 25 50
75
100
TEMPERATURE ( oC) 125 150 Figure 11. Power Dissipation vs.
Ambient Temperature © 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com
4 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued)
3000 5000 10000 20000 30000 50000 50
0
1 10 100 IC -COLLECTOR CURRENT (mA) I B -BASE CURRENT (uA) Figure 10. Gain Bandwidth Product
vs. Collector Current Figure 9. Collector Saturation Region P D -POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5
SOT-23 0.25 0 0 25 50
75
100
TEMPERATURE ( oC) 125 150 Figure 11. Power Dissipation vs.
Ambient Temperature © 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com
4 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued)