Datasheet MMBTA56, PZTA56 (ON Semiconductor) - 4

V CESAT -COLLECTOR EMITTE R VOLTAGE (V) TYP ICAL PULSED CURRE NT GAIN
FE -h 300 0.8 VCE = 1V 250 0.6 125 °C 200 0.4 150
25 °C 100 0.001 0.01
0.1
I C -COLLECTOR CURRENT (A) β = 10 1
-40 °C 0.8
125 °C 0.6 0.4
10 100
I C -COLLECTOR CURRE NT (mA) 125 °C 0
10 1000 1.2
V CE = 1V 1 -40 °C 0.8
0.6 25 °C
125 °C 0.4
0.2 Figure 5. Base-Emitter Saturation Voltage vs.
Collector Current 0
0.1 1
10
100
I C -COLLECTOR CURRENT (mA) 1000 Figure 6. Base-Emitter On Voltage vs.
Collector Current 10 f = 1.0 MHz V CB = 60V 100 CAPACITANCE (pF) I CBO -COLLECTOR CURRENT (nA) 100
I C -COLLECTOR CURRE NT (mA) Figure 4. Collector-Emitter Saturation Voltage vs.
Collector Current V BE( ON)-BAS E EMITTER ON VOLTAGE (V) V BESAT -BASE EM ITTE R VOLTAGE (V) Figure 3. Typical Pulsed Current Gain vs.
Collector Current 25 °C 25 °C
-40 °C 0.2 -40 °C 50 1.2 β = 10 1 0.1 0.01 C ib Cob
0.001
25 50
75
100
T A -AMBIENT TEMPERATURE (º C) 125 0.1 10 100 Figure 8. Input and Output Capacitance
vs. Reverse Voltage Figure 7. Collector Cut-Off Current vs.
Ambient Temperature © 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4 1 V CE -COLLECTOR VOLTAGE (V) www.fairchildsemi.com
3 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Typical Performance Characteristics