Datasheet F3L11MR12W2M1_B65 (Infineon) - 6

F3L11MR12W2M1_B65
VorläufigeDaten PreliminaryData AusgangskennlinieMOSFET(typisch) ÜbertragungscharakteristikMOSFET(typisch) outputcharacteristicMOSFET(typical) transfercharacteristicMOSFET(typical)
ID=f(VDS) ID=f(VGS) VGS=15V VDS=20V 200 200 Tvj = 25°C Tvj = 25°C Tvj = 125°C 180 T 180 vj = 150°C 160 160 140 140 120 120 [A] 100 [A] 100 D I D I 80 80 60 60 40 40 20 20 0 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 1 2 3 4 5 6 7 8 9 10 11 12 VDS [V] VGS [V]
SchaltverlusteMOSFET(typisch) SchaltverlusteMOSFET(typisch) switchinglossesMOSFET(typical) switchinglossesMOSFET(typical)
Eon=f(ID),Eoff=f(ID) Eon=f(RG),Eoff=f(RG) VGS=-5V/15V,RGon=4,7Ω,RGoff=4,7Ω,VDS=600V VGS=-5V/15V,ID=100A,VDS=600V 4,0 7,0 Eon, Tvj = 125°C Eon, Tvj = 125°C Eon, Tvj = 150°C Eon, Tvj = 150°C E E 3,5 off, Tvj = 125°C off, Tvj = 125°C Eoff, Tvj = 150°C 6,0 Eoff, Tvj = 150°C 3,0 5,0 2,5 4,0 2,0 E [mJ] E [mJ] 3,0 1,5 2,0 1,0 1,0 0,5 0,0 0,0 0 20 40 60 80 100 120 140 160 180 200 4 6 8 10 12 14 16 18 20 ID [A] RG [Ω] Datasheet 6 V2.1 2019-06-26 Document Outline / MOSFET / MOSFET IGBT,3-Level / IGBT,3-Level Diode, 3-Level / Diode, 3-Level Modul / Module NTC-Widerstand / NTC-Thermistor Diagramme / charts Diagramme / charts Diagramme / charts Diagramme / charts Schaltplan / Circuit diagram Gehäuseabmessungen / Package outlines /