Datasheet MAAM-011275-DIE (MACOM) - 3
| Hersteller | MACOM |
| Beschreibung | Wideband Distributed Amplifier |
| Seiten / Seite | 10 / 3 — MAAM-011275-DIE. Wideband Distributed Amplifier. 30 kHz - 40 GHz. Rev. … |
| Dateiformat / Größe | PDF / 1.1 Mb |
| Dokumentensprache | Englisch |
MAAM-011275-DIE. Wideband Distributed Amplifier. 30 kHz - 40 GHz. Rev. V1. Operating Conditions. Operating the MAAM-011275-DIE
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MAAM-011275-DIE Wideband Distributed Amplifier 30 kHz - 40 GHz Rev. V1 Operating Conditions
The recommended biasing conditions are VDD = 7 V VG2 can be used for gain control in al bias and IDSQ = 200 mA, with IDSQ set by adjusting VG1 configurations. If gain control is not required, VG2 after correctly setting VDD (refer to turn on should be left open-circuited. sequence). To maintain the best performance MACOM recommends using an active bias circuit for Regardless of bias method used, 2 bypass constant IDD. capacitors of 100 pF and 1 µF should be connected to VDAUX. This provides for improved gain flatness It is noted that any biasing arrangement used, below 2 GHz down to 30 kHz when required. including active biasing, must be able to source at least 10 mA into the VG1 port. This is because the The 100 pF capacitor can be a single layer capacitor VG1 port contains a resistive divider with a total or an SMT device on the PCB. Although it should be resistance to ground of 244 Ω. For the positioned as closely to the device as practically recommended IDSQ of 200 mA obtained at a VG1 possible, the frequency response is not particularly voltage of around 2.5 V, 10 mA of VG1 current (IG1) is sensitive to this. The 1 μF capacitor can be placed expected. These values of VG1 and IG1 will vary further away on the PCB. slightly between devices. Data in this datasheet was measured using bias There are two possible methods for biasing VDD: option 1 and 100 pF (C1) and 1 µF (C3) capacitors on VDAUX. 1. Apply VDD through a bias tee connected to the RFOUT/VDD port and connect an external DC block to the RFIN port. This provides wide band performance of 40 MHz to 50 GHz (depending on the bandwidth of the bias tee). 2. Apply VDD through a wideband conical inductor connected to the VDD port. No external bias tee is required at the RFOUT/VDD port; however, external DC blocks are required at both the RFIN and RFOUT ports. Using this method provides for an operational frequency of 40 MHz to 50 GHz.
Operating the MAAM-011275-DIE Turn-on
1. Apply VG1 (-4 V). 2. Increase VDD to +7 V. 3. Set IDSQ by adjusting VG1 more positive. (typical y -2.5 V for IDSQ = 200 mA). 4. Apply RFIN signal.
Turn-off
1. Remove RFIN signal. 2. Decrease VG1 to -4 V. 3. Decrease VDD to 0 V. 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:
https://www.macom.com/support
DC-0018857
The recommended biasing conditions are VDD = 7 V VG2 can be used for gain control in al bias and IDSQ = 200 mA, with IDSQ set by adjusting VG1 configurations. If gain control is not required, VG2 after correctly setting VDD (refer to turn on should be left open-circuited. sequence). To maintain the best performance MACOM recommends using an active bias circuit for Regardless of bias method used, 2 bypass constant IDD. capacitors of 100 pF and 1 µF should be connected to VDAUX. This provides for improved gain flatness It is noted that any biasing arrangement used, below 2 GHz down to 30 kHz when required. including active biasing, must be able to source at least 10 mA into the VG1 port. This is because the The 100 pF capacitor can be a single layer capacitor VG1 port contains a resistive divider with a total or an SMT device on the PCB. Although it should be resistance to ground of 244 Ω. For the positioned as closely to the device as practically recommended IDSQ of 200 mA obtained at a VG1 possible, the frequency response is not particularly voltage of around 2.5 V, 10 mA of VG1 current (IG1) is sensitive to this. The 1 μF capacitor can be placed expected. These values of VG1 and IG1 will vary further away on the PCB. slightly between devices. Data in this datasheet was measured using bias There are two possible methods for biasing VDD: option 1 and 100 pF (C1) and 1 µF (C3) capacitors on VDAUX. 1. Apply VDD through a bias tee connected to the RFOUT/VDD port and connect an external DC block to the RFIN port. This provides wide band performance of 40 MHz to 50 GHz (depending on the bandwidth of the bias tee). 2. Apply VDD through a wideband conical inductor connected to the VDD port. No external bias tee is required at the RFOUT/VDD port; however, external DC blocks are required at both the RFIN and RFOUT ports. Using this method provides for an operational frequency of 40 MHz to 50 GHz.
Operating the MAAM-011275-DIE Turn-on
1. Apply VG1 (-4 V). 2. Increase VDD to +7 V. 3. Set IDSQ by adjusting VG1 more positive. (typical y -2.5 V for IDSQ = 200 mA). 4. Apply RFIN signal.
Turn-off
1. Remove RFIN signal. 2. Decrease VG1 to -4 V. 3. Decrease VDD to 0 V. 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:
https://www.macom.com/support
DC-0018857