Datasheet BC847ATT1, BC847BTT1, BC847CTT1 (ON Semiconductor) - 2
| Hersteller | ON Semiconductor |
| Beschreibung | NPN Bipolar Transistor |
| Seiten / Seite | 6 / 2 — BC847ATT1, BC847BTT1, BC847CTT1. ELECTRICAL CHARACTERISTICS. … |
| Revision | 3 |
| Dateiformat / Größe | PDF / 68 Kb |
| Dokumentensprache | Englisch |
BC847ATT1, BC847BTT1, BC847CTT1. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS
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BC847ATT1, BC847BTT1, BC847CTT1 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO V (IC = 10 mA) BC847 Series 45 − − Collector − Emitter Breakdown Voltage V(BR)CES V (IC = 10 mA, VEB = 0) BC847 Series 50 − − Collector − Base Breakdown Voltage V(BR)CBO V (IC = 10 mA) BC847 Series 50 − − Emitter − Base Breakdown Voltage V(BR)EBO V (IE = 1.0 mA) BC847 Series 6.0 − − Collector Cutoff Current (VCB = 30 V) ICBO − − 15 nA (VCB = 30 V, TA = 150°C) − − 5.0 mA
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 10 mA, VCE = 5.0 V) BC847A − 90 − BC847B − 150 − BC847C − 270 − (IC = 2.0 mA, VCE = 5.0 V) BC847A 110 180 220 BC847B 200 290 450 BC847C 420 520 800 Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) − − 0.25 V Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − − 0.6 Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) − 0.7 − V Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − 0.9 − Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) − − 770
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT 100 − − MHz (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure NF dB (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) − − 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO V (IC = 10 mA) BC847 Series 45 − − Collector − Emitter Breakdown Voltage V(BR)CES V (IC = 10 mA, VEB = 0) BC847 Series 50 − − Collector − Base Breakdown Voltage V(BR)CBO V (IC = 10 mA) BC847 Series 50 − − Emitter − Base Breakdown Voltage V(BR)EBO V (IE = 1.0 mA) BC847 Series 6.0 − − Collector Cutoff Current (VCB = 30 V) ICBO − − 15 nA (VCB = 30 V, TA = 150°C) − − 5.0 mA
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 10 mA, VCE = 5.0 V) BC847A − 90 − BC847B − 150 − BC847C − 270 − (IC = 2.0 mA, VCE = 5.0 V) BC847A 110 180 220 BC847B 200 290 450 BC847C 420 520 800 Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) − − 0.25 V Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − − 0.6 Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) − 0.7 − V Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − 0.9 − Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) − − 770
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT 100 − − MHz (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure NF dB (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) − − 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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