Datasheet PN2907A, MMBT2907A, PZT2907A (ON Semiconductor) - 4 Hersteller ON Semiconductor Beschreibung 60 V PNP General-Purpose Transistor Seiten / Seite 11 / 4 — PN290. Typical Performance Characteristics. 7A / MMBT2907A / PZT2. ) V. ( … Revision 2 Dateiformat / Größe PDF / 883 Kb Dokumentensprache Englisch
PN290. Typical Performance Characteristics. 7A / MMBT2907A / PZT2. ) V. ( E. V = 5V. = 10. ENT. 125 °C. V R. URR. ITT. 25 °C. LSED C. C E. - 40 °C. YPI
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Modelllinie für dieses Datenblatt Textversion des Dokuments PN290 Typical Performance Characteristics 7A / MMBT2907A / PZT2 ) V IN ( E A 500G 0.5G A V = 5V βCE LT = 10 ENT 400O 0.4125 °C V R URR E 300ITT 0.3M 25 °C LSED C E 20025 °C R 0.2PU TO L C E CA 100- 40 °C 0.1LL 125 °C YPI O - 40 °C 907A — 60 T C - 0- 0FE 0.1 0.3 1 3 10 30 100 300AT h S 1 10 100 500I - CE C COLLECTOR CURRENT (mA) V I - COLLECTOR CURRE NT (mA) C Figure 1. Typical Pulsed Current Gain vs. Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Collector Current V PNP Gene ) ) V ( (V E 1E 1G G TA TA L - 40 °C L - 40 °C O 0.8O 0.8V V N R 25 °C O 0.6ra E T 0.6R 25 °C IT E l-Pu T M IT E 125 0.4°C 0.4M E 125 °C S β= 10 E rpose T A E S V = 5V CE A 0.2- B 0.2B ATS - N) BE 0(O 0V 1 10 100 500BE 0.1 1 10 25V r I I - COLLECTOR CURRE NT (mA) C - COLLECTOR CURRE NT (mA) ansistor C Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base-Emitter On Voltage vs. Collector Current Collector Current ) 20A 100(n T V = 35V CB N ) 16E 10F R p R ( U E 12C NC R C 1ib O TA T C CI 8A LE P L 0.1A O C 4C ob C - I CBO 0.01 0 25 50 75 100 125 0.1 1 10 50T - A AMBIE NT TEMP ERATURE ( C) ° REVERSE BIAS VOLTAGE (V) Figure 5. Collector Cut-Off Current vs. Figure 6. Input and Output Capacitance vs. Ambient Temperature Reverse Bias Voltage www.onsemi.com 4