Datasheet PN2907A, MMBT2907A, PZT2907A (ON Semiconductor) - 3

PN290 Electrical Characteristics 7A / MMBT2907A / PZT2
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V IBL Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA ICEX Collector Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA V I CB = -50 V, IE = 0 -0.02 μA
907A — 60
CBO Collector Cut-Off Current VCB = -50 V, IE = 0, TA = 150°C -20
On Characteristics
IC = -0.1 mA, VCE = -10 V 75 IC = -1.0 mA, VCE = -10 V 100
V PNP Gene
hFE DC Current Gain IC = -10 mA, VCE = -10 V 100 IC = -150 mA, VCE = -10 V(5) 100 300 IC = -500 mA, VCE = -10 V(5) 50 I V C = -150 mA, IB = -15 mA -0.4 CE(sat) Collector-Emitter Saturation Voltage(5) V IC = -500 mA, IB = -50 mA -1.6
ra
IC = -150 mA, IB = -15 mA(5) -1.3
l-Pu
VBE(sat) Base-Emitter Saturation Voltage V IC = -500 mA, IB = -50 mA -2.6
rpose T Small Signal Characteristics
I f C = -50 mA, VCE = -20 V, T Current Gain - Bandwidth Product 200 MHz f = 100 MHz
r
VCB = -10 V, IE = 0,
ansistor
Cob Output Capacitance 8.0 pF f = 100 kHz Cib Input Capacitance VEB = -2.0 V, IC = 0, f = 100 kHz 30 pF
Switching Characteristics
ton Turn-On Time 45 ns VCC = -30 V, IC = -150 mA, td Delay Time 10 ns IB1 = -15 mA tr Rise Time 40 ns toff Turn-Off Time 100 ns VCC = -6.0 V, IC = -150 mA, ts Storage Time 80 ns IB1 = IB2 = -15mA tf Fall Time 30 ns
Notes:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3