Datasheet MMBT2222A, PZT2222A (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | (Legacy Fairchild) NPN General Purpose Amplifier |
| Seiten / Seite | 10 / 3 — Values are at TA = 25°C unless otherwise noted. Symbol |
| Revision | A |
| Dateiformat / Größe | PDF / 388 Kb |
| Dokumentensprache | Englisch |
Values are at TA = 25°C unless otherwise noted. Symbol
Modelllinie für dieses Datenblatt
Textversion des Dokuments
Values are at TA = 25°C unless otherwise noted. Symbol
PD
RθJA Max. Parameter Unit MMBT2222A(3) PZT2222A(4) Total Device Dissipation 350 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction to Ambient 357 125 °C/W Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. © 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com
2 MMBT2222A / PZT2222A — NPN General-Purpose Amplifier Thermal Characteristics
PD
RθJA Max. Parameter Unit MMBT2222A(3) PZT2222A(4) Total Device Dissipation 350 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction to Ambient 357 125 °C/W Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. © 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com
2 MMBT2222A / PZT2222A — NPN General-Purpose Amplifier Thermal Characteristics