Datasheet MMBT2222A, PZT2222A (ON Semiconductor) - 5

V CESAT -COLLECTOR-EMITTER VOLTAGE (V) h FE -TYPICAL PULSED CURRENT GAIN 0.4 500
V CE = 5V 400
125 °C 300 25 °C 25 qC
㿐 0.1 100
-40 °C 0
0.1 0.3 1
3
10
30
100
I C -COLLECTOR CURRENT (mA) 300 V BE(ON) -BASE-EMITTER ON VOLTAGE (V) -40 qC
㿐 0.8 25qC
㿐
125 qC
㿐 0.6 0.4
1 10
100
I ICC -COLLECTOR CURRENT (m A) 1 10
100
I C -COLLECTOR CURRENT (mA) 500 Figure 4. Collector-Emitter Saturation Voltage
vs. Collector Current E = 10 1 -40qC
㿐 500 1
VCE = 5V
0.8 -40 °C
25 °C 0.6
125 °C 0.4 0.2
0.1 Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current 1
10
I ICC -COLLECTOR CURRENT (mA) 25 Figure 6. Base-Emitter On Voltage
vs. Collector Current 500
V 100 CB 20 = 40V CAPACITANCE (pF) I CBO -COLLECTOR CURRENT (nA) 125qC
㿐 0.2 200 Figure 3. Typical Pulsed Current Gain
vs. Collector Current V BESAT-BASE-EMITTER VOLTAGE (V) E = 10 0.3 10
1
0.1 16
12
C te 8
4 25 50
75
100
125
T A -AMBIENT TEMPERATURE (°C) 150 0.1 C ob 1
10
REVERSE BIAS VOLTAGE (V) 100 Figure 8. Emitter Transition and Output Capacitance
vs. Reverse Bias Voltage Figure 7. Collector Cut-Off Current
vs. Ambient Temperature © 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0 f = 1 MHz www.fairchildsemi.com
4 MMBT2222A / PZT2222A — NPN General-Purpose Amplifier Typical Performance Characteristics