Datasheet AL5822 (Diodes) - 3

AL5822 Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Symbol Parameters Ratings Unit
VIN Clamp Voltage for VIN Pin 30 V VS Voltage on VS Pin -0.3 to 6 V VC Voltage on VC Pin -0.3 to 6 V VVLMT Voltage on VLMT Pin -0.3 to 6 V VG Voltage on VG Pin -0.3 to 20 V TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature -55 to +150 °C
T
TLEAD Lead Temperature (Soldering, 10s) +260 °C
C
P
U
D Power Dissipation (TA = +50°C) (Note 4) 0.41 W
D
θJA Thermal Resistance (Junction to Ambient, no Heatsink) 240 °C/W
O
θJC Thermal Resistance (Junction to Case) 60 °C/W
R
ESD (HBM) ±4,000 V
P
– ESD (CDM) ±1,000 V
W
Note: 4. Device mounted on 1’’x1’’ FR-4 MRP substrate PC board, 2oz cooper, with minimum recommended pad layout. No thermal via and no ground plane.
E
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
N
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Recommended Operating Conditions
(@TA = +25°C, unless otherwise specified.) (Note 5)
Symbol Parameter Min Max Unit
TA Operating Ambient Temperature Range -40 +105 °C VIN Operating VCC Voltage 11 VIN_CLAMP(MIN) V Note: 5. The device may operate normally at +125°C ambient temperature under the condition not triggers temperature protection. AL5822 3 of 10 January 2019 Document number: DS41708 Rev. 1 - 2
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