Datasheet IRF7832TRPBF (Infineon) - 7
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 10 / 7 — D.U.T. Fig 18. Fig 19 |
| Dateiformat / Größe | PDF / 269 Kb |
| Dokumentensprache | Englisch |
D.U.T. Fig 18. Fig 19
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRF7832PbF Driver Gate Drive P.W.
D.U.T
Period D = P.W. Period + V * Circuit Layout Considerations GS=10V • Low Stray Inductance • Ground Plane - • Low Leakage Inductance D.U.T. I Current Transformer SD Waveform + Reverse Recovery Body Diode Forward Current Current - + - di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD • V dv/dt controlled by R DD Re-Applied RG G + Voltage • Driver same type as D.U.T. Body Diode Forward Drop • ISD controlled by Duty Factor "D" - Inductor Curent • D.U.T. - Device Under Test Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 18.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr
Fig 19.
Gate Charge Waveform www.irf.com 7
D.U.T
Period D = P.W. Period + V * Circuit Layout Considerations GS=10V • Low Stray Inductance • Ground Plane - • Low Leakage Inductance D.U.T. I Current Transformer SD Waveform + Reverse Recovery Body Diode Forward Current Current - + - di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD • V dv/dt controlled by R DD Re-Applied RG G + Voltage • Driver same type as D.U.T. Body Diode Forward Drop • ISD controlled by Duty Factor "D" - Inductor Curent • D.U.T. - Device Under Test Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 18.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr
Fig 19.
Gate Charge Waveform www.irf.com 7