Datasheet IRF7832TRPBF (Infineon) - 6
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 10 / 6 — Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. Fig 17 |
| Dateiformat / Größe | PDF / 269 Kb |
| Dokumentensprache | Englisch |
Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. Fig 17
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IRF7832PbF ) 10 600 Ω ) I J m( D = 20A m( I e D c y 500 n g a 8 r TOP 7.0A t e si n 13A s E BOTTOM 16A e e 400 R h n c 6 n O T al e J = 125°C a cr v 300 u A o e S s - 4 l u ot P - 200 n e i l a T g r J = 25°C ni D 2 S , 100 ) n S o( A S E D 0 0 R 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 Starting T V J , Junction Temperature (°C) GS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current Current Regulator Same Type as D.U.T. V(BR)DSS 15V tp 50KΩ .2µF 12V .3µF L V DRIVER DS +V D.U.T. DS - RG D.U.T + - VDD IAS A VGS 20V VGS tp 0.01Ω IAS 3mA I I G D
Fig 14.
Unclamped Inductive Test Circuit Current Sampling Resistors and Waveform L
Fig 15.
Gate Charge Test Circuit D VDS VDS + 90% V - DD D.U.T 10% VGS VGS Pulse Width < 1µs Duty Factor < 0.1% td(on) t t r d(off) tf
Fig 16.
Switching Time Test Circuit
Fig 17.
Switching Time Waveforms 6 www.irf.com
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current Current Regulator Same Type as D.U.T. V(BR)DSS 15V tp 50KΩ .2µF 12V .3µF L V DRIVER DS +V D.U.T. DS - RG D.U.T + - VDD IAS A VGS 20V VGS tp 0.01Ω IAS 3mA I I G D
Fig 14.
Unclamped Inductive Test Circuit Current Sampling Resistors and Waveform L
Fig 15.
Gate Charge Test Circuit D VDS VDS + 90% V - DD D.U.T 10% VGS VGS Pulse Width < 1µs Duty Factor < 0.1% td(on) t t r d(off) tf
Fig 16.
Switching Time Test Circuit
Fig 17.
Switching Time Waveforms 6 www.irf.com