Datasheet SBR10M100P5Q (Diodes) - 4
| Hersteller | Diodes |
| Beschreibung | Surface Mount Schottky Barrier Diode |
| Seiten / Seite | 6 / 4 — SBR10M100P5Q. www.diodes.com |
| Dateiformat / Größe | PDF / 494 Kb |
| Dokumentensprache | Englisch |
SBR10M100P5Q. www.diodes.com
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SBR10M100P5Q
10000 f = 1MHz F) p( EC 1000 N TAI C A P A C L 100 TOTA , TC 10 0 5 10 15 20 25 30 35 40 V , DC REVERSE VOLTAGE (V) R Figure 7. Typical Junction Capacitance 1 E D=0.5 D=0.9 C N TA D=0.3 D=0.7 SI S E 0.1 R D=0.1 L A M R D=0.05 E TH T D=0.02 N E I S 0.01 N D=0.01 A TR , D=0.005 ) R (t) = r(t) * R t θJA θJA (r Note 8 Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 8. Transient Thermal Resistance MRP SBR10M100P5Q 4 of 6 September 2018 Document number:DS40876 Rev. 3 - 2
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© Diodes Incorporated
10000 f = 1MHz F) p( EC 1000 N TAI C A P A C L 100 TOTA , TC 10 0 5 10 15 20 25 30 35 40 V , DC REVERSE VOLTAGE (V) R Figure 7. Typical Junction Capacitance 1 E D=0.5 D=0.9 C N TA D=0.3 D=0.7 SI S E 0.1 R D=0.1 L A M R D=0.05 E TH T D=0.02 N E I S 0.01 N D=0.01 A TR , D=0.005 ) R (t) = r(t) * R t θJA θJA (r Note 8 Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 8. Transient Thermal Resistance MRP SBR10M100P5Q 4 of 6 September 2018 Document number:DS40876 Rev. 3 - 2
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© Diodes Incorporated