Datasheet ADL5570 (Analog Devices)

HerstellerAnalog Devices
Beschreibung2.3 GHz TO 2.4 GHz WiMAX Power Amplifier
Seiten / Seite12 / 1 — 2.3 GHz to 2.4 GHz. WiMAX Power Amplifier. ADL5570. FEATURES. FUNCTIONAL …
Dateiformat / GrößePDF / 356 Kb
DokumentenspracheEnglisch

2.3 GHz to 2.4 GHz. WiMAX Power Amplifier. ADL5570. FEATURES. FUNCTIONAL BLOCK DIAGRAM. VCC1. VCC2

Datasheet ADL5570 Analog Devices

Modelllinie für dieses Datenblatt

Textversion des Dokuments

2.3 GHz to 2.4 GHz WiMAX Power Amplifier ADL5570 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 Fixed gain of 29 dB Operation from 2.3 GHz to 2.4 GHz EVM ≤ 3% at POUT = 25 dBm with 16 QAM OFDMA THIRD RFOUT SECOND Input internally matched to 50 Ω RFIN FIRST IM1 IM2 IM3 OM STAGE STAGE STAGE Power supply: 3.2 V to 4.2 V Quiescent current 130 mA in high power mode STBY BIAS_1 BIAS_2 BIAS_3 70 mA in low power mode Power-added efficiency (PAE): 20%
01
VREG
0
CFLT
9-
MODE
672
Multiple operating modes to reduce battery drain
0 Figure 1.
Low power mode: 100 mA Standby mode: 1mA Sleep mode: <1 μA APPLICATIONS WiMAX/WiBro mobile terminals GENERAL DESCRIPTION
The ADL5570 is a high linearity 2.3 GHz to 2.4 GHz power The ADL5570 operates over a supply voltage range from 3.2 V amplifier designed for WiMAX terminals using TDD operation to 4.2 V with a supply current of 440 mA burst rms when at a duty cycle of 31%. With a gain of 29 dB and an output delivering 25 dBm (3.5 V supply). A low power mode is also compression point of 31 dBm at 2.35 GHz, it can operate at available for operation at power levels of ≤10 dBm with an output power level up to 26 dBm while maintaining an EVM optimized operating and quiescent currents of 100 mA and of ≤3% (OFDM 16 or 64 QAM) with a supply voltage of 3.5 V. 70 mA, respectively. A standby mode is available that reduces PAE is 20% @ POUT = 25 dBm. the quiescent current to 1 mA, which is useful when a TDD The ADL5570 RF input is matched on-chip and provides an terminal is receiving data. input return loss of less than −10 dB. The open-collector output is The ADL5570 is fabricated in a GaAs HBT process and is packaged externally matched with strip-line and external shunt capacitance. in a 4 mm × 4 mm, 16-lead, Pb-free RoHS-compliant LFCSP that uses an exposed paddle for excellent thermal impedance. It operates from −40°C to +85°C.
Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 www.analog.com Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 ©2007 Analog Devices, Inc. All rights reserved.
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS VCC = 3.5 V ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS BASIC CONNECTIONS Power Supply RF Input Interface RF Output Interface Transmit/Standby Enable VREG Enable MODE High Power/Low Power Enable 64 QAM OFDMA PERFORMANCE POWER-ADDED EFFICIENCY EVALUATION BOARD MEASUREMENT SETUP USING THE ADL5570 EVALUATION BOARD OUTLINE DIMENSIONS ORDERING GUIDE