Datasheet BC847, BC547 (NXP) - 8
| Hersteller | NXP |
| Beschreibung | 45 V, 100 mA NPN general-purpose transistors |
| Seiten / Seite | 15 / 8 — NXP Semiconductors. BC847/BC547 series. 45 V, 100 mA NPN general-purpose … |
| Dateiformat / Größe | PDF / 100 Kb |
| Dokumentensprache | Englisch |
NXP Semiconductors. BC847/BC547 series. 45 V, 100 mA NPN general-purpose transistors. Fig 5
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NXP Semiconductors BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors
mgt727 mgt728 600 1200 V h BE FE (mV) 500 (1) 1000 (1) 400 800 (2) (2) 300 600 200 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 5. Selection B: DC current gain as a function of Fig 6. Selection B: Base-emitter voltage as a collector current; typical values function of collector current; typical values
mgt729 mgt730 104 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) (3) (2) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 7. Selection B: Collector-emitter saturation Fig 8. Selection B: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 10 December 2008 8 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Revision history 11. Legal information 11.1 Data sheet status 11.2 Definitions 11.3 Disclaimers 11.4 Trademarks 12. Contact information 13. Contents
mgt727 mgt728 600 1200 V h BE FE (mV) 500 (1) 1000 (1) 400 800 (2) (2) 300 600 200 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 5. Selection B: DC current gain as a function of Fig 6. Selection B: Base-emitter voltage as a collector current; typical values function of collector current; typical values
mgt729 mgt730 104 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) (3) (2) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 7. Selection B: Collector-emitter saturation Fig 8. Selection B: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 10 December 2008 8 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Revision history 11. Legal information 11.1 Data sheet status 11.2 Definitions 11.3 Disclaimers 11.4 Trademarks 12. Contact information 13. Contents