Datasheet BC847, BC547 (NXP) - 9
| Hersteller | NXP |
| Beschreibung | 45 V, 100 mA NPN general-purpose transistors |
| Seiten / Seite | 15 / 9 — NXP Semiconductors. BC847/BC547 series. 45 V, 100 mA NPN general-purpose … |
| Dateiformat / Größe | PDF / 100 Kb |
| Dokumentensprache | Englisch |
NXP Semiconductors. BC847/BC547 series. 45 V, 100 mA NPN general-purpose transistors. Fig 9
Modelllinie für dieses Datenblatt
Textversion des Dokuments
NXP Semiconductors BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors
mgt731 mgt732 1200 1200 V h BE FE (mV) 1000 1000 (1) (1) 800 800 (2) (2) 600 600 400 400 (3) (3) 200 200 0 0 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 9. Selection C: DC current gain as a function of Fig 10. Selection C: Base-emitter voltage as a collector current; typical values function of collector current; typical values
mgt733 mgt734 104 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) 200 (3) (2) 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 11. Selection C: Collector-emitter saturation Fig 12. Selection C: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 10 December 2008 9 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Revision history 11. Legal information 11.1 Data sheet status 11.2 Definitions 11.3 Disclaimers 11.4 Trademarks 12. Contact information 13. Contents
mgt731 mgt732 1200 1200 V h BE FE (mV) 1000 1000 (1) (1) 800 800 (2) (2) 600 600 400 400 (3) (3) 200 200 0 0 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 9. Selection C: DC current gain as a function of Fig 10. Selection C: Base-emitter voltage as a collector current; typical values function of collector current; typical values
mgt733 mgt734 104 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) 200 (3) (2) 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 11. Selection C: Collector-emitter saturation Fig 12. Selection C: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 10 December 2008 9 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Revision history 11. Legal information 11.1 Data sheet status 11.2 Definitions 11.3 Disclaimers 11.4 Trademarks 12. Contact information 13. Contents