Datasheet MMBT3906T (ON Semiconductor) - 6

MMBT3906TT1 STATIC CHARACTERISTICS
2.0 TJ = +125°C VCE = 1.0 V 1.0 +25°C 0.7 -55°C 0.5 GAIN (NORMALIZED) 0.3 0.2 FEh , DC CURRENT 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
1.0 TS) TJ = 25°C 0.8 TAGE (VOL IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 OR EMITTER VOL 0.2 CEV , COLLECT 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
1.0 1.0 T C) J = 25°C VBE(sat) @ IC/IB = 10 ° 0.5 0.8 q +25 VC FOR VCE(sat) °C TO +125°C VBE @ VCE = 1.0 V TS) 0 -55°C TO +25°C 0.6 -0.5 TAGE (VOL 0.4 +25°C TO +125°C , VOL TURE COEFFICIENTS (mV/ -1.0 V qVS FOR VBE(sat) -55°C TO +25°C 0.2 VCE(sat) @ IC/IB = 10 -1.5 , TEMPERA Vθ 0 -2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 16. “ON” Voltages Figure 17. Temperature Coefficients www.onsemi.com 6