Datasheet MMBT3906T (ON Semiconductor)
| Hersteller | ON Semiconductor |
| Beschreibung | PNP Bipolar Transistor |
| Seiten / Seite | 7 / 1 — PNP Silicon. www.onsemi.com. GENERAL PURPOSE. Features. AMPLIFIER … |
| Revision | 3 |
| Dateiformat / Größe | PDF / 97 Kb |
| Dokumentensprache | Englisch |
PNP Silicon. www.onsemi.com. GENERAL PURPOSE. Features. AMPLIFIER TRANSISTORS. SURFACE MOUNT. MAXIMUM RATINGS. Rating. Symbol. Value. Unit
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link to page 1 link to page 1 link to page 1 link to page 1 MMBT3906TT1 General Purpose Transistors
PNP Silicon
This transistor is designed for general purpose amplifier
www.onsemi.com
applications. It is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications.
GENERAL PURPOSE Features AMPLIFIER TRANSISTORS
• NSVM Prefix for Automotive and Other Applications Requiring
SURFACE MOUNT
Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE
MAXIMUM RATINGS
(TA = 25°C)
Rating Symbol Value Unit
2 EMITTER Collector−Emitter Voltage VCEO −40 Vdc Collector−Base Voltage VCBO −40 Vdc 3
CASE 463
Emitter−Base Voltage VEBO −5.0 Vdc
SOT−416/SC−75
2
STYLE 1
Collector Current − Continuous IC −200 mAdc 1
THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit
Total Device Dissipation, PD FR−4 Board (Note 1) @TA = 25°C 200 mW 2A M G Derated above 25°C 1.6 mW/°C G Thermal Resistance, Junction−to−Ambient RqJA 600 °C/W (Note 1) 1 Total Device Dissipation, P 2A = Device Code D FR−4 Board (Note 2) @TA = 25°C 300 mW M = Date Code* Derated above 25°C 2.4 mW/°C G = Pb−Free Package Thermal Resistance, Junction−to−Ambient R (Note: Microdot may be in either location) qJA 400 °C/W (Note 2) *Date Code orientation may vary depending up- on manufacturing location. Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad
Device Package Shipping
2. FR−4 @ 1.0 × 1.0 Inch Pad † MMBT3906TT1G SOT−416 3000 / Tape & (Pb−Free) Reel NSVMMBT3906TT1G SOT−416 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2017 − Rev. 3 MMBT3906TT1/D
PNP Silicon
This transistor is designed for general purpose amplifier
www.onsemi.com
applications. It is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications.
GENERAL PURPOSE Features AMPLIFIER TRANSISTORS
• NSVM Prefix for Automotive and Other Applications Requiring
SURFACE MOUNT
Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE
MAXIMUM RATINGS
(TA = 25°C)
Rating Symbol Value Unit
2 EMITTER Collector−Emitter Voltage VCEO −40 Vdc Collector−Base Voltage VCBO −40 Vdc 3
CASE 463
Emitter−Base Voltage VEBO −5.0 Vdc
SOT−416/SC−75
2
STYLE 1
Collector Current − Continuous IC −200 mAdc 1
THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit
Total Device Dissipation, PD FR−4 Board (Note 1) @TA = 25°C 200 mW 2A M G Derated above 25°C 1.6 mW/°C G Thermal Resistance, Junction−to−Ambient RqJA 600 °C/W (Note 1) 1 Total Device Dissipation, P 2A = Device Code D FR−4 Board (Note 2) @TA = 25°C 300 mW M = Date Code* Derated above 25°C 2.4 mW/°C G = Pb−Free Package Thermal Resistance, Junction−to−Ambient R (Note: Microdot may be in either location) qJA 400 °C/W (Note 2) *Date Code orientation may vary depending up- on manufacturing location. Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad
Device Package Shipping
2. FR−4 @ 1.0 × 1.0 Inch Pad † MMBT3906TT1G SOT−416 3000 / Tape & (Pb−Free) Reel NSVMMBT3906TT1G SOT−416 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2017 − Rev. 3 MMBT3906TT1/D