Datasheet DGTD65T40S2PT (Diodes) - 2

DGTD65T40S2PT Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCE 650 V TC = +25°C 80 A DC Collector Current, Limited by TJmax IC TC = +100°C 40 A Pulsed Collector Current, tp Limited by TJmax ICpuls 120 A TC = +25°C 40 A Diode Forward Current Limited by TJmax IF TC = +100°C 20 A Diode Pulsed Current, tp Limited by TJmax IFpuls 120 A Gate-Emitter Voltage VGE ±20 V
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
230 Power Dissipation Linear Derating Factor (Note 6) TC = +25°C PD W TC = +100°C 115 Thermal Resistance, Junction to Ambient (Note 6) RθJA 40 Thermal Resistance, Junction to Case for IBGT (Note 6) Rθ °C/W JC 0.65 Thermal Resistance, Junction to Case for Diode (Note 6) RθJC 1.75 Operating Temperature TJ -40 to +175 °C Storage Temperature Range TSTG -55 to +150 Note: 6. When mounted on a standard JEDEC 2-layer FR-4 board. DGTD65T40S2PT 2 of 9 August 2018 Document Number DS41113 Rev. 1 - 2
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