Datasheet MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | Dual General Purpose Transistors |
| Seiten / Seite | 8 / 3 — MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1. SWITCHING … |
| Revision | 11 |
| Dateiformat / Größe | PDF / 99 Kb |
| Dokumentensprache | Englisch |
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1. SWITCHING CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit
Modelllinie für dieses Datenblatt
Textversion des Dokuments
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 SWITCHING CHARACTERISTICS Characteristic Symbol Min Max Unit
Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) td − 35 ns Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts − 200 ns Fall Time (IB1 = IB2 = 1.0 mAdc) tf − 50 +3 V +3 V DUTY CYCLE = 2% 10 < t t 1 < 500 ms 1 +10.9 V 300 ns +10.9 V DUTY CYCLE = 2% 275 275 10 k 10 k 0 -0.5 V Cs < 4 pF* < 1 ns 1N916 Cs < 4 pF* -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit www.onsemi.com 3
Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) td − 35 ns Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts − 200 ns Fall Time (IB1 = IB2 = 1.0 mAdc) tf − 50 +3 V +3 V DUTY CYCLE = 2% 10 < t t 1 < 500 ms 1 +10.9 V 300 ns +10.9 V DUTY CYCLE = 2% 275 275 10 k 10 k 0 -0.5 V Cs < 4 pF* < 1 ns 1N916 Cs < 4 pF* -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit www.onsemi.com 3