Datasheet MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 (ON Semiconductor) - 2

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MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 40 − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 mAdc, IE = 0) 60 − Emitter − Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 mAdc, IC = 0) 6.0 − Base Cutoff Current IBL nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) − 50 Collector Cutoff Current ICEX nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) − 50
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 Base − Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 300 − Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − 4.0 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 8.0 Input Impedance hie k W (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 1.0 10 2.0 12 Voltage Feedback Ratio hre X 10− 4 (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 0.5 8.0 0.1 10 Small − Signal Current Gain hfe − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 100 400 100 400 Output Admittance hoe mmhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 1.0 40 3.0 60 Noise Figure NF dB (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) − 5.0 2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
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