Datasheet 2N5210/MMBT5210 (ON Semiconductor) - 4

(continued) Typical Pulsed Current Gain
vs Collector Current
1200 V C E = 5.0V o 125 C 1000 800
o 25 C 600 400
o -40 C 200 0
0.01 0.03 0.3 0.1 3 1 30 10 100 VBEON -BASE-EMITTER ON VOLTAGE (V) hFE -TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation
Voltage vs Collector Current
0.30 0.25 β = 10 0.20
o 125 C
0.15
o 25 C 0.10 0.05 o -40 C 0.1 1 o -40 C
0.8 o 25 C
o 125 C
0.4 β = 10
0.2
0.1 1 10 100 VBEON -BASE-EMITTER ON VOLTAGE (V) 1.0 1.0 o 0.8 -40 C
o 25 C
0.6
o 125 C
0.4 V C E = 5.0V 0.2
0.1 1 10 I C -COLLECTO R CURRENT (m A) Collector-Cutoff Current
vs Ambient Temperature
10
VCB = 45V 1 0.1
25 100 Base-Emitter ON Voltage vs
Collector Current I C -COLLECTO R CURRENT (mA) I CBO -COLLE CTOR CURRENT (nA) VBESAT -COLLECTOR-EMITTER VOLTAGE (V) Base-Emitter Saturation
Voltage vs Collector Current 0.6 10 I C -COLLECTOR CURR EN T (m A) I C -COLLECTOR CURRENT (m A) 50
75
100
125
T A -AMBIE NT TEMP ERATURE ( ° C) 150 2N5210/MMBT5210 NPN General Purpose Amplifier