Datasheet 2N5210/MMBT5210 (ON Semiconductor) - 3

(continued) Electrical Characteristics
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 50 ICBO Collector Cutoff Current VCB = 35 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA V 2N5210/MMBT5210 NPN General Purpose Amplifier ON CHARACTERISTICS
hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 100 µA, VCE = 5.0 V
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
IC = 10 mA, IB = 1.0 mA VBE(on) Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 200
250
250 600 0.7 V 0.85 V SMALL SIGNAL CHARACTERISTICS
fT Current Gain -Bandwidth Product Ccb Collector-Base Capacitance hfe Small-Signal Current Gain NF Noise Figure *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% IC = 500 µA,VCE = 5.0 V,
f= 20 MHz
VCB = 5.0 V, IE = 0, f = 100 kHz 30 IC = 1.0 mA, VCE = 5.0 V,
f = 1.0 kHz
IC = 20 µA, VCE = 5.0 V,
RS = 22 kΩ, f = 10 Hz to 15.7 kHz
IC = 20 µA, VCE = 5.0 V,
RS = 10 kΩ, f = 1.0 kHz 250 MHz
4.0 pF 900
2.0 dB 3.0 dB 3