Datasheet TCR8BM (Toshiba) - 2

TCR8BM series Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit Bias voltage VBIAS -0.3 to 6.0 V Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage V OUT -0.3 to VIN + 0.3 ≤ 6.0 V Power dissipation PD 600 (Note 1) mW Junction temperature Tj -40 to 150 °C Storage temperature range Tstg −55 to 150 °C Note
:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1
:
Rating at mounting on a board (Glass epoxy board dimension : 40 mm x 40 mm (4layer)，t = 1.8 mm Metal pattern ratio : approximately 70% each layer)
Operating Ranges
Characteristics Symbol Rating Unit Bias voltage VBIAS (VOUT + 1.4 ≥ 2.5) to 5.5 V Input voltage VIN VOUT + VDO to VBIAS V Control voltage VCT 0 to VBIAS V Output voltage VOUT 0.8 to 3.6 V Output current IOUT 0 to 0.8 (Note 2) A Operation Temperature Topr −40 to 85 °C COUT COUT ≥ 2.2 μF ― CIN CIN ≥ 1.0 μF ― CBIAS CBIAS ≥ 0.1 μF ― Note 2: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Maximum operating ranges output current specification defined as lifetime average junction temperature of +45°C where max rated DC current = lifetime average current to avoid electro migration. © 2018-2019 2 2019-01-15 Toshiba Electronic Devices & Storage Corporation