Datasheet TCR8BM (Toshiba)
| Hersteller | Toshiba |
| Beschreibung | Low Dropout (LDO) Linear Voltage Regulator |
| Seiten / Seite | 11 / 1 — TCR8BM series. 800 mA CMOS Ultra Low Dropout Regulator. Features |
| Dateiformat / Größe | PDF / 722 Kb |
| Dokumentensprache | Englisch |
TCR8BM series. 800 mA CMOS Ultra Low Dropout Regulator. Features
Modelllinie für dieses Datenblatt
- TCR8BM085A TCR8BM08A TCR8BM095A TCR8BM09A TCR8BM10 TCR8BM105 TCR8BM105A TCR8BM10A TCR8BM11 TCR8BM115A TCR8BM11A TCR8BM12 TCR8BM125A TCR8BM12A TCR8BM13A TCR8BM14A TCR8BM15A TCR8BM16A TCR8BM17A TCR8BM18A TCR8BM19A TCR8BM20A TCR8BM21A TCR8BM22A TCR8BM23A TCR8BM24A TCR8BM25A TCR8BM26A TCR8BM27A TCR8BM285A TCR8BM28A TCR8BM295A TCR8BM29A TCR8BM30A TCR8BM31A TCR8BM32A TCR8BM33A TCR8BM34A TCR8BM35A TCR8BM36A
Textversion des Dokuments
TCR8BM series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR8BM series 800 mA CMOS Ultra Low Dropout Regulator
The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that al ows ultra low dropout of 170 mV (Typ.) at IOUT = 800 mA ( 1.1 V output, VBIAS = 3.3 V ). These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V, and capable of driving up to 800 mA. Other features include overcurrent protection, thermal shutdown, and Auto-discharge. The TCR8BM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As smal ceramic input and output capacitors can be used with the TCR8BM series, these devices are ideal for portable applications that require DFN5B high-density board assembly such as cellular phones. Weight
:
1.4 mg ( Typ.)
Features
• Low dropout voltage VDO = 170 mV (Typ.) at 1.1 V output, VBIAS = 3.3 V , IOUT = 800 mA • Low stand-by current ( IBIAS(OFF) = 1 μA (Max)) • Low quiescent bias current ( IBIAS(ON) = 20 μA (Typ.) at VBIAS = 5.5 V, IOUT = 0 mA ) • Wide range output voltage line up ( VOUT = 0.8 to 3.6 V ) • Overcurrent protection • Thermal shutdown • Inrush current reduction • Under voltage lockout (TCR8BMxxA products) • Auto-discharge • Pull down connection between CONTROL and GND • Ultra small package DFN5B (1.2 mm x 1.2 mm ; t 0.38 mm ) Start of commercial production 2018-08 © 2018-2019 1 2019-01-15 Toshiba Electronic Devices & Storage Corporation
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR8BM series 800 mA CMOS Ultra Low Dropout Regulator
The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that al ows ultra low dropout of 170 mV (Typ.) at IOUT = 800 mA ( 1.1 V output, VBIAS = 3.3 V ). These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V, and capable of driving up to 800 mA. Other features include overcurrent protection, thermal shutdown, and Auto-discharge. The TCR8BM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As smal ceramic input and output capacitors can be used with the TCR8BM series, these devices are ideal for portable applications that require DFN5B high-density board assembly such as cellular phones. Weight
:
1.4 mg ( Typ.)
Features
• Low dropout voltage VDO = 170 mV (Typ.) at 1.1 V output, VBIAS = 3.3 V , IOUT = 800 mA • Low stand-by current ( IBIAS(OFF) = 1 μA (Max)) • Low quiescent bias current ( IBIAS(ON) = 20 μA (Typ.) at VBIAS = 5.5 V, IOUT = 0 mA ) • Wide range output voltage line up ( VOUT = 0.8 to 3.6 V ) • Overcurrent protection • Thermal shutdown • Inrush current reduction • Under voltage lockout (TCR8BMxxA products) • Auto-discharge • Pull down connection between CONTROL and GND • Ultra small package DFN5B (1.2 mm x 1.2 mm ; t 0.38 mm ) Start of commercial production 2018-08 © 2018-2019 1 2019-01-15 Toshiba Electronic Devices & Storage Corporation