Datasheet MAT02 (Analog Devices) - 3

MAT02 ELECTRICAL CHARACTERISTICS (VCB = 15 V, –25
ⴗ
C
≤
TA
≤
+85
ⴗ
C, unless otherwise noted.) MAT02E MAT02F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Offset Voltage VOS VCB = 0 70 220 µV 1 µA ≤ IC ≤ 1 mA1 Average Offset Voltage Drift TCV 2 OS 10 µA ≤ IC ≤ 1 mA, 0 ≤ VCB ≤ VMAX 0.08 0.3 0.08 1 µV/°C VOS Trimmed to Zero3 0.03 0.1 0.03 0.3 Input Offset Current IOS IC = 10 µA 8 13 nA Input Offset Current Drift TCIOS IC = 10 µA4 40 90 40 150 pA/°C Input Bias Current IB IC = 10 µA 45 50 nA Current Gain hFE IC = 1 mA5 325 300 IC = 100 µA 275 250 IC = 10 µA 225 200 IC = 1 µA 200 150 Collector-Base ICBO VCB = VMAX 2 3 nA Leakage Current Collector-Emitter ICES VCE = VMAX, VBE = 0 3 4 nA Leakage Current Collector-Collector ICC VCC = VMAX 3 4 nA Leakage Current NOTES 1Measured at IC = 10 µA and guaranteed by design over the specified range of IC. V 2 OS Guaranteed by VOS test (TCVOS ≅ for VOS VBE) T = 298K for TA = 25°C. T 3The initial zero offset voltage is established by adjusting the ratio of IC1 to IC2 at TA = 25°C. This ratio must be held to 0.003% over the entire temperature range. Measurements are taken at the temperature extremes and 25°C. 4Guaranteed by design. 5Current gain is guaranteed with Collector-Base Voltage (VCB) swept from 0 V to VMAX at the indicated collector current. Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS1
Collector-Base Voltage (BV Operating Junction Temperature . –55°C to +150°C CBO) . 40 V Collector-Emitter Voltage (BV Storage Temperature . –65°C to +150°C CEO) . 40 V Collector-Collector Voltage (BV Lead Temperature (Soldering, 60 sec) . 300°C CC) . 40 V Emitter-Emitter Voltage (BV Junction Temperature . –65°C to +150°C EE) . 40 V Collector Current (IC) . 20 mA NOTES Emitter Current (I 1 E) . 20 mA Absolute maximum ratings apply to both DICE and packaged devices. Total Power Dissipation 2Rating applies to applications using heat sinking to control case temperature. Case Temperature ≤ 40°C2 . 1.8 W Derate linearly at 16.4 mW/°C for case temperature above 40°C. 3Rating applies to applications not using a heat sinking; devices in free air only. Ambient Temperature ≤ 70°C3 . 500 mW Derate linearly at 6.3 mW/°C for ambient temperature above 70°C. Operating Temperature Range
OBSOLETE
MAT02E, F . –25°C to +85°C
ORDERING GUIDE VOS max Temperature Package Model (TA = 25
ⴗ
C) Range Option
MAT02EH 50 µV –25°C to +85°C TO-78 MAT02FH 150 µV –25°C to +85°C TO-78
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection.
WARNING!
Although the MAT02 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
ESD SENSITIVE DEVICE
precautions are recommended to avoid performance degradation or loss of functionality. REV. E –3–