Datasheet MAT02 (Analog Devices) - 2
| Hersteller | Analog Devices |
| Beschreibung | Low Noise, Matched Dual Monolithic Transistor |
| Seiten / Seite | 12 / 2 — MAT02–SPECIFICATIONS. ELECTRICAL CHARACTERISTICS (@ VCB = 15 V, IC = 10. … |
| Revision | E |
| Dateiformat / Größe | PDF / 788 Kb |
| Dokumentensprache | Englisch |
MAT02–SPECIFICATIONS. ELECTRICAL CHARACTERISTICS (@ VCB = 15 V, IC = 10. A, TA = 25. C, unless otherwise noted.). MAT02E MAT02F
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MAT02–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ VCB = 15 V, IC = 10
A, TA = 25
ⴗ
C, unless otherwise noted.) MAT02E MAT02F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Current Gain hFE IC = 1 mA1 500 605 400 605 IC = 100 µA 500 590 400 590 IC = 10 µA 400 550 300 550 IC = 1 µA 300 485 200 485 Current Gain Match ∆hFE 10 µA ≤ IC ≤ 1 mA2 0.5 2 0.5 4 % Offset Voltage VOS VCB = 0, 1 µA ≤ IC ≤ 1 mA3 10 50 80 150 µV Offset Voltage ∆V 4 OS/∆VCB 0 ≤ VCB ≤ VMAX 10 25 10 50 µV Change vs. VCB 1 µA ≤ IC ≤ 1 mA3 10 25 10 50 µV Offset Voltage Change ∆VOS/∆IC VCB = 0 V 5 25 5 50 µV vs. Collector Current 1 µA ≤ IC ≤ 1 mA3 5 25 5 50 µV Offset Current Change vs. VCB ∆IOS/∆VCB 0 ≤ VCB ≤ VMAX 30 70 30 70 pA/V Bulk Resistance rBE 10 µA ≤ IC ≤ 10 mA5 0.3 0.5 0.3 0.5 Ω Collector-Base Leakage Current ICBO VCB = VMAX 25 200 25 400 pA Collector-Collector Leakage Current I 5, 6 CC VCC = VMAX 35 200 35 400 pA Collector-Emitter V 5, 6 CE = VMAX Leakage Current ICES VBE = 0 35 200 35 400 pA Noise Voltage Density en IC = 1 mA, VCB = 07 fO = 10 Hz 1.6 2 1.6 3 nV/√Hz fO = 100 Hz 0.9 1 0.9 2 nV/√Hz fO = 1 kHz 0.85 1 0.85 2 nV/√Hz fO = 10 kHz 0.85 1 0.85 2 nV/√Hz Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100 µA 0.05 0.1 0.05 0.2 V Input Bias Current IB IC = 10 µA 25 34 nA Input Offset Current IOS IC = 10 µA 0.6 1.3 nA Breakdown Voltage BVCEO 40 40 V Gain-Bandwidth Product fT IC = 10 mA, VCE = 10 V 200 200 MHz Output Capacitance COB VCB = 15 V, IE = 0 23 23 pF Collector-Collector Capacitance CCC VCC = 0 35 35 pF NOTES 1Current gain is guaranteed with Collector-Base Voltage (VCB) swept from 0 to VMAX at the indicated collector currents. 2Current gain match (∆h 100 (∆I FE) is defined as: ∆hFE = B) (hFE min) IC 3Measured at IC = 10 µA and guaranteed by design over the specified range of IC. 4This is the maximum change in VOS as VCB is swept from 0 V to 40 V. 5Guaranteed by design. 6ICC and ICES are verified by measurement of ICBO. 7Sample tested.
OBSOLETE
Specifications subject to change without notice. –2– REV. E
A, TA = 25
ⴗ
C, unless otherwise noted.) MAT02E MAT02F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Current Gain hFE IC = 1 mA1 500 605 400 605 IC = 100 µA 500 590 400 590 IC = 10 µA 400 550 300 550 IC = 1 µA 300 485 200 485 Current Gain Match ∆hFE 10 µA ≤ IC ≤ 1 mA2 0.5 2 0.5 4 % Offset Voltage VOS VCB = 0, 1 µA ≤ IC ≤ 1 mA3 10 50 80 150 µV Offset Voltage ∆V 4 OS/∆VCB 0 ≤ VCB ≤ VMAX 10 25 10 50 µV Change vs. VCB 1 µA ≤ IC ≤ 1 mA3 10 25 10 50 µV Offset Voltage Change ∆VOS/∆IC VCB = 0 V 5 25 5 50 µV vs. Collector Current 1 µA ≤ IC ≤ 1 mA3 5 25 5 50 µV Offset Current Change vs. VCB ∆IOS/∆VCB 0 ≤ VCB ≤ VMAX 30 70 30 70 pA/V Bulk Resistance rBE 10 µA ≤ IC ≤ 10 mA5 0.3 0.5 0.3 0.5 Ω Collector-Base Leakage Current ICBO VCB = VMAX 25 200 25 400 pA Collector-Collector Leakage Current I 5, 6 CC VCC = VMAX 35 200 35 400 pA Collector-Emitter V 5, 6 CE = VMAX Leakage Current ICES VBE = 0 35 200 35 400 pA Noise Voltage Density en IC = 1 mA, VCB = 07 fO = 10 Hz 1.6 2 1.6 3 nV/√Hz fO = 100 Hz 0.9 1 0.9 2 nV/√Hz fO = 1 kHz 0.85 1 0.85 2 nV/√Hz fO = 10 kHz 0.85 1 0.85 2 nV/√Hz Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100 µA 0.05 0.1 0.05 0.2 V Input Bias Current IB IC = 10 µA 25 34 nA Input Offset Current IOS IC = 10 µA 0.6 1.3 nA Breakdown Voltage BVCEO 40 40 V Gain-Bandwidth Product fT IC = 10 mA, VCE = 10 V 200 200 MHz Output Capacitance COB VCB = 15 V, IE = 0 23 23 pF Collector-Collector Capacitance CCC VCC = 0 35 35 pF NOTES 1Current gain is guaranteed with Collector-Base Voltage (VCB) swept from 0 to VMAX at the indicated collector currents. 2Current gain match (∆h 100 (∆I FE) is defined as: ∆hFE = B) (hFE min) IC 3Measured at IC = 10 µA and guaranteed by design over the specified range of IC. 4This is the maximum change in VOS as VCB is swept from 0 V to 40 V. 5Guaranteed by design. 6ICC and ICES are verified by measurement of ICBO. 7Sample tested.
OBSOLETE
Specifications subject to change without notice. –2– REV. E