Datasheet BFR92A (NXP) - 3

HerstellerNXP
BeschreibungNPN 5 GHz wideband transistor
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DokumentenspracheEnglisch

THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. Note. CHARACTERISTICS. MIN. TYP. MAX. Notes

THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Note CHARACTERISTICS MIN TYP MAX Notes

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NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1 260 K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector leakage current IE = 0; VCB = 10 V − − 50 nA hFE DC current gain IC = 15 mA; VCE = 10 V; see Fig.4 65 90 135 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz; − 0.6 − pF see Fig.5 Ce emitter capacitance IC = ic = 0; VEB = 10 V; f = 1 MHz − 1.2 − pF Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz; − 5 − GHz see Fig.6 GUM maximum unilateral power IC = 15 mA; VCE = 10 V; f = 1 GHz; − 14 − dB gain (note 1) Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; − 8 − dB Tamb = 25 °C F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; − 2.1 − dB Γs = Γopt; Tamb = 25 °C; see Figs 13 and 14 IC = 5 mA; VCE = 10 V; f = 2 GHz; − 3 − dB Γs = Γopt; Tamb = 25 °C; see Figs 13 and 14 VO output voltage notes 2 and 3 − 150 − mV d2 second order intermodulation notes 2 and 4; see Fig.16 − −50 − dB distortion
Notes
2 S 1. G 21 UM is the maximum unilateral power gain, assuming S12 is zero and G 10 log ------------------------------- dB˙ = . UM  2  2 1 – S  1 – S 11   22  2. Measured on the same die in a SOT37 package (BFR90A). 3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C Vp = VO at dim = −60 dB; fp = 795.25 MHz; Vq = VO −6 dB; fq = 803.25 MHz; Vr = VO −6 dB; fr = 805.25 MHz; measured at fp + fq − fr = 793.25 MHz. 4. IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C Vp = 60 mV at fp = 250 MHz; Vq = 60 mV at fq = 560 MHz; measured at fp + fq = 810 MHz. Rev. 04 - 2 March 2009 3 of 12 Document Outline FEATURES DESCRIPTION APPLICATIONS PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history