Datasheet BFR92A (NXP) - 2

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A
FEATURES DESCRIPTION
• High power gain NPN wideband transistor in a plastic page
3
• Low noise figure SOT23 package. • PNP complement: BFT92. Low intermodulation distortion.
PINNING 1 2 APPLICATIONS
Top view MSB003 •
PIN DESCRIPTION
RF wideband amplifiers and oscillators. 1 base
Marking code:
P2%. 2 emitter Fig.1 SOT23. 3 collector
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage − 20 V VCEO collector-emitter voltage − 15 V IC collector current (DC) − 25 mA Ptot total power dissipation Ts ≤ 95 °C − 300 mW Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 5 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; f = 1 GHz; 14 − dB Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; 8 − dB Tamb = 25 °C F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; 2.1 − dB Γs = Γopt; Tamb = 25 °C VO output voltage dim = −60 dB; IC = 14 mA; VCE = 10 V; 150 − mV RL = 75 Ω; fp + fq − fr = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 25 mA Ptot total power dissipation Ts ≤ 95 °C; note 1; see Fig.3 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C
Note
1. Ts is the temperature at the soldering point of the collector pin. Rev. 04 - 2 March 2009 2 of 12 Document Outline FEATURES DESCRIPTION APPLICATIONS PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history