Datasheet OP262-EP (Analog Devices) - 3

link to page 3 OP262-EP SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 45 325 μV −55°C ≤ TA ≤ +125°C 1 mV Input Bias Current IB 360 600 nA −55°C ≤ TA ≤ +125°C 650 nA Input Offset Current IOS ±2.5 ±25 nA −55°C ≤ TA ≤ +125°C ±40 nA Input Voltage Range VCM 0 4 V Common-Mode Rejection CMRR 0 V ≤ VCM ≤ 4.0 V, −55°C ≤ TA ≤ +125°C 70 110 dB Large Signal Voltage Gain AVO RL = 2 kΩ, 0.5 ≤ VOUT ≤ 4.5 V 30 V/mV RL = 10 kΩ, 0.5 ≤ VOUT ≤ 4.5 V 65 88 V/mV RL = 10 kΩ, −55°C ≤ TA ≤ +125°C 40 V/mV Offset Voltage Drift1 ΔVOS/ΔT 1 μV/°C Bias Current Drift ΔIB/ΔT 250 pA/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 250 μA, −55°C ≤ TA ≤ +125°C 4.95 4.99 V IL = 5 mA 4.85 4.94 V Output Voltage Swing Low VOL IL = 250 μA, −55°C ≤TA ≤ +125°C 14 50 mV IL = 5 mA 65 150 mV Short-Circuit Current ISC Short to ground ±80 mA Maximum Output Current IOUT ±30 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V 120 dB −55°C ≤ TA ≤ +125°C 90 dB Supply Current/Amplifier ISY VOUT = 2.5 V 500 700 μA −55°C ≤ TA ≤ +125°C 850 μA DYNAMIC PERFORMANCE Slew Rate SR 1 V < VOUT < 4 V, RL = 10 kΩ 10 V/μs Settling Time tS To 0.1%, AV = −1, VO = 2 V step 540 ns Gain Bandwidth Product GBP 15 MHz Phase Margin φm 61 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 μV p-p Voltage Noise Density en f = 1 kHz 9.5 nV/√Hz Current Noise Density in f = 1 kHz 0.4 pA/√Hz 1 Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta. Rev. 0 | Page 3 of 12 Document Outline FEATURES APPLICATIONS PIN CONFIGURATION GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE