Datasheet MIC5021 (Microchip) - 5
| Hersteller | Microchip |
| Beschreibung | High-Speed, High-Side MOSFET Driver with Charge Pump and Overcurrent Limit |
| Seiten / Seite | 24 / 5 — MIC5021. TEMPERATURE SPECIFICATIONS (Note 1) |
| Revision | 12-09-2016 |
| Dateiformat / Größe | PDF / 1.5 Mb |
| Dokumentensprache | Englisch |
MIC5021. TEMPERATURE SPECIFICATIONS (Note 1)
Modelllinie für dieses Datenblatt
Textversion des Dokuments
MIC5021
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters Sym. Min. Typ. Max. Units Conditions Thermal Resistance, PDIP-8Ld JA –40 — 85 °C Maximum Ambient Temperature Thermal Resistance, SOIC-8Ld JA –40 — 85 °C Maximum Ambient Temperature Junction Thermal Resistances Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum rating. Sustained junction temperatures above the maximum rating can impact the device
reliability. 2016 Microchip Technology Inc. DS20005677A-page 5
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters Sym. Min. Typ. Max. Units Conditions Thermal Resistance, PDIP-8Ld JA –40 — 85 °C Maximum Ambient Temperature Thermal Resistance, SOIC-8Ld JA –40 — 85 °C Maximum Ambient Temperature Junction Thermal Resistances Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum rating. Sustained junction temperatures above the maximum rating can impact the device
reliability. 2016 Microchip Technology Inc. DS20005677A-page 5